نتایج جستجو برای: monolithic microwave integrated circuit mmic

تعداد نتایج: 419474  

Journal: :Wireless Engineering and Technology 2011
A. A. Jamali A. Gaafar A. A. Abd Elaziz

After the release of the unlicensed Ultra Wideband (UWB) spectrum 3.1 GHz to 10.6 GHz for the commercial purposes by the Federal Communications Commission (FCC), industries and academia pay much attention due to its properties of excellent immunity to multi-path interference, high secured data rate, low power consumption, and simple configuration. The feasible UWB antenna design face some chall...

Journal: :Journal of the Korea Academia-Industrial cooperation Society 2015

2002
C. Schwörer A. Tessmann M. Leich A. Leuther S. Kudszus A. Bessemoulin M. Schlechtweg

In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT) high electron mobility transistor technologies. Starting with a modulator-driver MMIC for optical transmission systems, we describe state of the art MMICs like a 94 GHz low-noise amplifier, a 35 GHz and a 60 GHz medium power amplifier and finally we demonstrate the feasibility of a monolithicall...

2004
Anders Mellberg Mikael Malmkvist Jan Grahn Herbert Zirath

The basic active and passive elements for a 50 nm InGaAs-InAlAs-InP HEMT process with pseudomorphic InGaAs channel have been realized. The design and fabrication of 50 nm gate length InP HEMTs, MIM capacitors and thin film resistors have been studied. The integration of the components in a microstrip-based MMIC process has been proven by the successful demonstration of a wideband amplifier.

2014
Ernesto Limiti Sergio Colangeli Andrea Bentini Walter Ciccognani

In this contribution, a set of robust GaN MMIC T/R switches and low-noise amplifiers, all based on the same GaN process, is presented. The target operating bandwidths are the X-band and the 2-18 GHz bandwidth. Several robustness tests on the fabricated MMICs demonstrate state-ofthe-art survivability to CW input power levels. The development of high-power amplifiers, robust low-noise amplifiers ...

2013
A. Alahyari

Abstract— The inductor-less designing of monolithic tunable active dual-band bandpass filter is presented in this study. Biasing voltages signify main role. They can control the center frequency and quality factor. Using four biasing voltages and cascading two similar filters leads to dual-band bandpass filter. By keeping the gain constant, the center frequency shift is 200 MHz. Regardless cons...

2006
Miguel N. Pimenta Izzat Darwazeh

A novel structure that encodes and decodes very high speed unipolar Code Division Multiple Access (CDMA) signals is proposed. This scheme is based on the analogy between the distributed amplifier and the transversal filter. By adjusting the gain of each tap and the delay between taps, the proposed device acts as a high-speed encoder (transmitter) or correlator (receiver). The theoretical analys...

2001
J. Caldinhas Vaz Luc Delage J. Costa Freire

The limitations on the implementation of BiCMOS active inductors at 2GHz are described. The circuit is based on a two BJT feedback configuration. Two types of biasing circuits were used: active bias and resistive bias. With 0.8μm BiCMOS standard technology is possible to obtain up to a few nanohenry inductance with a Q close to 3 at 2GHz. Two MMIC were studied.

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