Self-consistent full-band Monte Carlo simulations are employed to compare the performance of nanoscale strained-Si single-gate (SG) and unstrained-Si double-gate (DG) MOSFETs for a gate length of 25 nm. Almost the same on-current as in the DG-MOSFET can be achieved by strain in a SG-MOSFET for the same gate overdrive. This is due to the compensation of the higher electron sheet density in the t...

High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have been in...

A n improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in the level 1 and level 3 subcircuit methods used extensively for modeling MOSFETs in power circuits. The new model offers excellent correlation to product data, transistor scaling not possible wit...

This work presents different techniques to increase the sensitivity of commercial MOSFET (no RADFET) to demonstrate their potential as dosimetry sensors with electrons beams (for IORT) and gamma radiation. Different models of commercial MOSFET were irradiated in unbiased and biased mode, to select the best candidate and configuration for each type of radiotherapy.

Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects. key words: MOSFET, extension, gate, overlap, tilt implantation...

The corrections of the methodology of power BJT and MOSFET transistor models parameter extraction taking into account the self heating effects are presented For BJT these corrections are included into VBIC model parameter extraction process. For MOSFET current generator connected to standard SPICE MOS model is proposed to take into account drain current growth with transistor temperature.

In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dominant. When a MOSFET is subjected to large-signal excitation, the RTS noise is influenced. In this paper, we present different visualizations of the transient behaviour of the RTS. Keywords— MOSFET, Random Telegraph Signal, Large Signal Excitation, LF Noise.

the full adders (fas) constitute the essential elements of digital systems, in a sense that they affect the circuit parameters of such systems. with respect to the mosfet restrictions, its replacement by new devices and technologies is inevitable. qca is one of the accomplishments in nanotechnology nominated as the candidate for mosfet replacement. in this article 4 new layouts are presented fo...