As a wide bandgap power electronics device, the SiC MOSFET has lot of advantages over traditional Si IGBT. Replacing IGBT with in existing converter is an effective means to improve performance and promote upgrading converter. Generally, order make full use its MOSFET, circuit cannot be simply replaced by but main driver need redesigned because oscillation problem cross-talk caused parasitic pa...

SOI means Silicon on Insulator. This type of transistors has Silicon-Insulator-Silicon substrate which is different from conventional MOSFET structure where metal layer is used on the top of Insulator [1, . Now a days, the width of the oxide of a MOSFET is reduced from 300nm to 1.2nm and even less with scaling in technology. If it is further reduced, the leakage problems (majorly Sub-threshold ...

The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. The most popul...

Capacitance–voltage (C–V) gate characteristics of power metal-oxide-semiconductor field-effect transistors ( mosfet s) play an important role in the dynamic device performance. C–V characterization structure is a necessary step for evaluating switching behavior and calibrating lumped equivalent...

The paper presents a simulation study of effect of interface fixed charges on the performance of the cylindrical nanowire MOSFET for different channel materials (Si, GaAs and Ge). The objective of the present work is to study the effect of hot carrier damage/stress induced damage/process damage/radiation damage induced fixed charges at the semiconductor-oxide interface of the cylindrical nanowi...

Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are expected to become industry standards in ~2007. As devices are scaled down to these lengths, overlapand fringe-capacitance between the gate and source/drain regions gain more importance as a fraction of the total gate-capacitance. Therefore in numerical simulations of these structures it is necessary to carefully include ...

Since the introduction of SiO2/Si devices in the 1960s, the only basic change in the design of a MOSFET has been in the gate length. The channel thickness has fundamentally remained unchanged, as the inversion layer in a silicon MOSFET is still about 10 nm thick. Bipolar transistor base widths have been of sub-micron dimensions all this time. It is time for a new property to be exploited in con...

Carbon Nanotube FET technology is a new promising technology for high speed digital applications. This paper investigates optimizing Analog Circuits architecture to take advantage of this technology in mixed mode ICs and point at the optimum topology for CNFETs for the first time. It was found through simulations that the optimum topology for high-bandwidth analog circuits is obtained by using ...