نتایج جستجو برای: nanoelectronic

تعداد نتایج: 778  

2009
W. Meevasana F. Baumberger K. Tanaka F. Schmitt W. R. Dunkel D. H. Lu S.-K. Mo H. Eisaki Z.-X. Shen

W. Meevasana, ∗ F. Baumberger, K. Tanaka, 3 F. Schmitt, W. R. Dunkel, D. H. Lu, S.-K. Mo, 3 H. Eisaki, and Z.-X. Shen † Department of Physics, Applied Physics, and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, CA 94305 School of Physics and Astronomy, University of St. Andrews, St. Andrews, Fife KY16 9SS, UK Advanced Light Source, Lawrence Berkeley National Lab, Berk...

2002
Jie Han Elisabeth Wechsler

Fullerene-based Nanoelectronic Devices Show `Tremendous Potential' Researchers at the NAS Facility are examining the role of the fullerene structure -a form of carbon -in creating electronic devices for the next century. In this article, scientists Jie Han and Subhash Saini give a bird's-eye view of the transition from conventional CMOS-based semiconductor devices to quantum devices, and discus...

2008
Bao Liu

A voltage controlled nano addressing circuit is proposed, which (1) improves yield and enables aggressive scaling with no requirement of precise layout design, (2) achieves precision of addressing by transistor current-to-voltage sensitivity in the circuit and applied external address voltages, and (3) is adaptive to and more robust in the presence of process variations which are expected to be...

Journal: :Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics 1999
R P Sear S W Chung G Markovich W M Gelbart J R Heath

Nanoparticles deposited at the air-water interface are observed to form circular domains at low density and stripes at higher density. We interpret these patterns as equilibrium phenomena produced by a competition between an attraction and a longer-ranged repulsion. Computer simulations of a generic pair potential with attractive and repulsive parts of this kind, reproduce both the circular and...

2012
Lin Xu Zhe Jiang Quan Qing Liqiang Mai Qingjie Zhang Charles M. Lieber

2 Structures for Nanoelectronic Bioprobes 3 Lin Xu,†,‡,§ Zhe Jiang,‡,§ Quan Qing,‡,§ Liqiang Mai,† Qingjie Zhang,† and Charles M. Lieber*,†,‡,∥ 4 †WUT-Harvard Joint Nano Key Laboratory, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, 5 Wuhan University of Technology, Wuhan 430070, China 6 ‡Department of Chemistry and Chemical Biology and School of Engineering...

2008
D. M. N. M. Dissanayake R. P. Silva

Cyclic voltammetry was used to measure PbS nanocrystal PbS-NC energy levels. Accuracy of these measurements was justified by electron transfer experiments, with well known fullerene derivatives, which included photoluminescence quenching experiments and current density-voltage measurements of hybrid photovoltaic devices. It is believed that these energy level measurements, carried out on PbS-NC...

Journal: :ACS nano 2008
Hadi M Zareie Scott W Morgan Matthew Moghaddam Abbas I Maaroof Michael B Cortie Matthew R Phillips

"Natural" lithography was used to prepare arrays of nanoscale capacitors on silicon. The capacitance was verified by a novel technique based on the interaction of a charged substrate with the electron beam of a scanning electron microscope. The "nanocapacitors" possessed a capacitance of approximately 1 x 10(-16) F and were observed to hold charge for over an hour. Our results indicate that fab...

2002
Supriyo Bandyopadhyay N. Kouklin P. F. Williams Natale J. Ianno

Two-dimensional arrays of vertical quantum wire Esaki tunnel diodes, laterally connected to their nearest neighbors by resistive/capacitive connections, constitute a powerful and versatile neuromorphic architecture that can function as classical Boolean logic circuits, associative memory, image processors, and combinatorial optimizers. In this paper, we discuss the basic philosophy behind adopt...

1997
Christian Pacha Karl Goser

This paper describes the design of arithmetic circuits based on hybrid integrated resonant tunneling diodes and heterostructure eld-e ect transistors. The key components are depth-2 parallel counters consisting of multiple terminal threshold gates. In particular, we propose a novel parallel addition scheme by combining threshold logic and systolic VLSI-algorithms for bit-level computations. The...

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