Statistical analysis and optimization is critical for robust nanoscale circuit design. To accurately perform such analysis, primary process variation sources must be identified and their distributions must be well characterized. We present a rigorous method to extract process variations from in-situ IV measurements. Transistor statistics are collected from a test chip fabricated in a 65nm SOI p...

The lithographically-produced CMOS transistor has been the key technology that has enabled the information revolution. However, in the near future the limitations, both technical and economic, introduced by lithographic fabrication may inhibit further decreases in feature size. Chemically assembled electronic nanotechnology (CAEN) is a promising alternative to CMOS for constructing circuits wit...

In order to sustain the historic progress in information processing, transmission, and storage, concurrent integration of heterogeneous functionality and materials with fine granularity is clearly imperative for the best connectivity, system performance, and density metrics. In this paper, we review recent developments in heterogeneous integration of epitaxial nanostructures for their applicati...

Scanning capacitance microscopy is used to characterize local electronic properties in an AlxGa12xN/GaN heterostructure field-effect transistor epitaxial layer structure. Lateral inhomogeneity in electronic properties is clearly observed, at length scales ranging from ;0.1 to .2 mm, in images obtained at fixed bias voltages. Acquisition of a series of images over a wide range of bias voltages a...

The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is smaller than the scattering-limited mean free path. The drain-end carrier velocity is smaller than the ultimate saturation velocity due to the presence of a finite electric field at the drain. The current-voltage c...

An ion-sensitive field-effect transistor (ISFET) biosensor is thought to be the center of the next era of health diagnosis. However, questions are raised about its functions and reliability in liquid samples. Consequently, real-life clinical applications are few in number. In this study, we report a strategy to minimize the sensing signal drift error during bioanalyte detection in an ISFET bios...

As semiconductor manufacturing entered into nanoscale era, performance degradation due to Negative Bias Temperature Instability (NBTI) became one of the major threats to circuits reliability. In this paper, we present a model and analysis of NBTI impact on circuit delays. First, we model NBTI impact on gate intrinsic delay and output transition delay. The insights of our models reveal that NBTI...

A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width ( approximately 10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot ( approximately 7 nanometers by 7 nanometers) as the f...

Molecular communications, where molecules are used to encode, transmit, and receive information, is a promising means of enabling the coordination of nanoscale devices. The paradigm has been extensively studied from various aspects, including channel modeling and noise analysis. Comparatively little attention has been given to the physical design of molecular receiver and transmitter, envisioni...

Plasmonic devices have a unique ability to concentrate and convert optical energy into a small volume. There is a tremendous interest in achieving active control of plasmon resonances, which would enable switchable hotspots for applications such as surface-enhanced spectroscopy and single molecule emission. The small footprint and strong-field confinement of plasmonic nanoantennas also holds gr...