Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.

The current-induced motion of transverse magnetic domain walls (DWs) in a multisegmented Co/Ni nanowire is investigated numerically. We find that the phase diagram current pulse length magnitude presents rare diversity behaviors depending on segment's and material parameters. show by changing only shape, range parameters we obtain controlled DW with or without polarity change. change arises sim...

In this paper, we explore the quantitative investigation of the high-frequency performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire (SiNW) MOSFET and compared with Silicon Nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOSFET over SiNW MOSFET in terms of transc...

The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au.

A new solvothermal approach is introduced to synthesize ultrathin Sb2Se3 nanowires with diameters ranging from 10 to 20 nm and with length up to 30 μm. The Sb2Se3 nanowire-based photodetectors are firstly fabricated on polyethylene terephthalate and printing paper substrates, which exhibit excellent response to visible light with fast response time (0.18 and 0.22 s), high flexibility, and durab...

We present a theory for a finite-length superconducting nanowire coupled to an environment. We show that in the absence of dissipation quantum phase slips always destroy superconductivity, even at zero temperature. Dissipation stabilizes the superconducting phase. We apply this theory to explain the "antiproximity effect" recently seen by Tian et al. in zinc nanowires.

By controlling local substrate temperature in a chemical vapor deposition system, we have successfully achieved spatial composition grading covering the complete composition range of ternary alloy CdSSe nanowires on a single substrate of 1.2 cm in length. Spatial photoluminescence scan along the substrate length shows peak wavelength changes continuously from approximately 500 to approximately ...