نتایج جستجو برای: narrow band gap semiconductor

تعداد نتایج: 360555  

2013
Cheolho Jeon Ha-Chul Shin Inkyung Song Minkook Kim Ji-Hoon Park Jungho Nam Dong-Hwa Oh Sunhee Woo Chan-Cuk Hwang Chong-Yun Park Joung Real Ahn

For graphene to be used in semiconductor applications, a 'wide energy gap' of at least 0.5 eV at the Dirac energy must be opened without the introduction of atomic defects. However, such a wide energy gap has not been realized in graphene, except in the cases of narrow, chemically terminated graphene nanostructures with inevitable edge defects. Here, we demonstrated that a wide energy gap of 0....

Optical modeling was applied for obtaining absorbance spectra and band gap values for different morphology of ZnO semiconductor. In optical modeling, the relative permittivity scalars of zinc oxide coral like nanorods were calculated using the Bruggeman homogenization formalism. ZnO nano rods (ZONRs) as a nucleus layer were fabricated on the Indium Tin Oxide (ITO) by chronoamperometry (CA) in a...

Journal: :Physical review letters 1989
Yablonovitch Gmitter

We employ the concepts of band theory to describe the behavior of electromagnetic waves in three-dimensionally periodic face-centered-cubic (fcc) dielectric structures. This can produce a "photonic band gap" in which optical modes, spontaneous emission, and zero point fluctuations are all absent. In the course of a broad experimental survey, we have found that most fcc dielectric structures hav...

2009
Aron Walsh Yanfa Yan Muhammad N. Huda Mowafak M. Al-Jassim Su-Huai Wei

We report the first-principles electronic structure of BiVO4, a promising photocatalyst for hydrogen generation. BiVO4 is found to be a direct band gap semiconductor, despite having band extrema away from the Brillouin zone center. Coupling between Bi 6s and O 2p forces an upward dispersion of the valence band at the zone boundary; however, a direct gap is maintained via coupling between V 3d, ...

2009
S. Mookerjea R. Krishnan A. Vallett

The inter-band tunnel transistor (TFET) architecture features a subkT/q sub-threshold slope operation and can potentially support high ION/IOFF ratios over small gate voltages. Based on twodimensional numerical simulations, we investigate TFET in various material systems ranging from silicon to indium arsenide. TFET performance can be enhanced when heterojunctions are employed at the source sid...

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