نتایج جستجو برای: oxide film
تعداد نتایج: 260004 فیلتر نتایج به سال:
A TiO2 film photoanode with gradient structure in nanosheet/nanoparticle concentration on the fluorine-doped tin oxide glass from substrate to surface was prepared by a screen printing method. The as-prepared dye-sensitized solar cell (DSSC) based on the gradient film electrode exhibited an enhanced photoelectric conversion efficiency of 6.48%, exceeding that of a pure nanoparticle-based DSSC w...
The electrochemical properties of fluoride-coated lithium cobalt oxide [LiCoO2] thin films were characterized. Aluminum fluoride [AlF3] and lanthanum fluoride [LaF3] coating layers were fabricated on a pristine LiCoO2 thin film by using a spin-coating process. The AlF3- and LaF3-coated films exhibited a higher rate capability, cyclic performance, and stability at high temperature than the prist...
The paper will introduce a simple new method on the synthesis of both hafnium and zirconium nitrate precursors. The intermediate product, dinitrogen pentoxide produced from the water extraction from fume nitric acid via phosphorus pentoxide, was condensed by liquid nitrogen trap into a flask equipped with hafnium or zirconium tetrachloride. To give the high yield, the mixture of fume nitric aci...
Single molecule tracer diffusion studies of evaporating (thinning) ultrathin tetrakis-2-ethyl-hexoxysilane (TEHOS) films on silicon with 100 nm thermal oxide reveal a considerable slowdown of the molecular mobility within less than 4 nm above the substrate (corresponding to a few molecular TEHOS layers). This is related to restricted mobility and structure formation of the liquid in this region...
چکیده ندارد.
We report on the optical constants and their dispersion profiles determined from spectroscopic ellipsometry (SE) analysis of the 20%-titanium (Ti) doped of tungsten oxide (WO3) thin films grown by sputter-deposition. The Ti-doped WO3 films grown in a wide range of temperatures (25-500 °C) are amorphous and optically transparent. SE data indicates that there is no significant interdiffusion at t...
In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf) rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V) characteristics of...
Scanning tunneling microscopy has developed into a powerful tool for the characterization of conductive surfaces, for which the overlap of tip and sample wave functions determines the image contrast. On insulating layers, as the CaO thin film grown on Mo(001) investigated here, direct overlap between initial and final states is not enabled anymore and electrons are transported via hopping throu...
Related Articles Physical understanding of negative bias temperature instability below room temperature J. Appl. Phys. 112, 104514 (2012) Lg=60nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator Appl. Phys. Lett. 101, 223507 (2012) The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors Appl. Phys. Lett. 101, 2...
We introduce a new class of siloxane-based epoxy polymers for thin film optical waveguide applications. The thickness of spun-on films can be controlled by varying either spin speed or viscosity using solvents. Cured films exhibit excellent adhesion to silicon oxide and Al and excellent thermal and chemical stability. Waveguides of ~ 2 micron thickness on silicon oxide exhibit <0.2 dB/cm loss a...
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