The electron beam assisted chemical vapor deposit ion of silicon nitride anti-reflection coatings onto thin film CdS/CuInSe2 solar cells and the resultant effects on their performance are reported. In some cases large increases in the short circuit current, open circuit voltage and fill factor were observed. The present results are explained by the usual index matching anti-reflection mechanism...

It is well known that injection of glass fibre–reinforced plastics (GFRP) causes abrasive wear in moulds’ cavities and runners. Physical vapour deposition (PVD) coatings are intensively used to improve the wear resistance of different tools, also being one of the most promising ways to increase the moulds’ lifespan, mainly when used with plastics strongly reinforced with glass fibres. This work...

We present a summary of investigations on the use of proper orthogonal decomposition (POD) techniques as a reduced basis method for computation of feedback controls and compensators in a high pressure chemical vapor deposition (HPCVD) reactor that includes multiple species and controls, gas phase reactions, and time dependent tracking signals that are consistent with pulsed vapor reactant input...

We present measurements of the electrical conductivity of metallic nanowires which have been fabricated by chemical deposition of a thin continuous palladium film onto single DNA molecules to install electrical functionality. The DNA molecules have been positioned between macroscopic Au electrodes and are metallized afterwards. Low-resistance electrical interfacing was obtained by pinning the n...

This paper reports the effect of the different deposition methods towards the ZnO nanostructure crystal quality and film thickness on the polyimide substrate. The ZnO film has been deposited by using the spray pyrolysis technique, sol-gel and RF Sputtering. Different methods give a different nanostructure of the ZnO thin film. Sol gel methods, results of nanoflowers ZnO thin film with the thick...

The influence of precursor structure and reactivity on properties of compound semiconductors grown by metalorganic chemical vapor deposition (MOCVD) is discussed and illustrated with examples for growth of GaAs, ZnSe, and A1,Gal-,N. Gas-phase and surface reactions of organometallic arsenic compounds provide understanding of variation in carbon incorporation levels with precursor structure. Surf...

Fullerene (C60) films were prepared on Si, ITO, and Cu substrates by the physical vapor deposition (PVD) method. It was observed that the morphology and structure of fullerene films strongly depend on the substrates. Along with the interactions between fullerenes and substrates increasing from ITO, Si to Cu substrate, C60 forms small polycrystalline grains, large polycrystalline grains and full...

This article presents a short history and the recent advancement of the development of chemical vapor deposition technologies to form thin film gas barrier coatings on PET bottles and other plastic containers in food and beverage containers. Among different gas barrier enhancement technologies, coating can show unique performance where relatively high gas barrier enhancement is possible to vari...

Initiated chemical vapor deposition (iCVD) is a novel process capable of producing a range of polymeric and multifunctional nanocoatings. The process utilizes hot filaments to drive gas phase chemistry which enables the deposition of true linear polymers rather than the highly crosslinked organic networks often associated with plasma enhanced CVD. Importantly, the object to be coated remains at...

Tellurium nanostructures have been prepared by physical vapor deposition method in a tube furnace. The experiments were carried out under argon gas flow at a pressure of 1 mbar. Tellurium powder was evaporated by heating at 350°C and 430°C and was condensed on substrates at 110–250°C, in the downstream of argon gas flow. The products were characterized by field emission scanning electron micros...