نتایج جستجو برای: planar si

تعداد نتایج: 138625  

Journal: :AJNR. American journal of neuroradiology 2003
Henriette J Tschampa Petra Mürtz Sebastian Flacke Sebastian Paus Hans H Schild Horst Urbach

BACKGROUND AND PURPOSE Recent neuropathologic research suggests thalamic involvement in sporadic Creutzfeldt-Jakob disease (sCJD), which has been disregarded in imaging studies. Diffusion-weighted (DW) MR imaging has the highest sensitivity for the detection of signal intensity (SI) abnormalities in CJD. We hypothesized that pathologic changes in the thalamus in sCJD can be detected by using a ...

2001
D. S. Ruby S. H. Zaidi S. Narayanan B. M. Damiani A. Rohatgi

We developed a maskless plasma texturing technique for multicrystalline silicon (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to extremely low levels. Internal quantum efficiencies as high as those on planar cells have been obtained, boo...

Journal: :Int. J. Found. Comput. Sci. 2006
Emilio Di Giacomo Giuseppe Liotta Francesco Trotta

Let S0, S1, . . . , Sk−1 be k sets of points such that the points of Si are colored with color i (i = 0, . . . , k−1). Let G be a planar graph such that |Si| vertices of G have color i, for every 0 ≤ i ≤ k − 1. A k-chromatic point-set embedding of G on S = S0 ∪ S1 ∪ · · · ∪ Sk−1 is a crossing-free drawing of G such that each vertex colored i is mapped to a point of Si, and each edge is a polygo...

Journal: :ACS applied materials & interfaces 2016
Jiangtao Qu Wonsik Choi Parsian Katal Mohseni Xiuling Li Yingjie Zhang Hansheng Chen Simon Ringer Rongkun Zheng

Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interf...

2010
Zeliha Baktır Mehmet Akkurt Nihat Şireci Hasan Küçükbay

In the title compound, C(14)H(21)N(2)Si(+)·Br(-)·H(2)O, the benzimidazole ring system is almost planar [maximum deviation = 0.021 (2) Å]. In the crystal, O-H⋯Br and C-H⋯O hydrogen bonds link the ions via the O atoms of the water mol-ecules. In addition, there are π-π stacking inter-actions between the centroids of the benzene and imidazole rings of the benzimidazole ring system [centroid-centro...

Journal: :Atoms 2022

Recently, we reported a series of global minima whose structures consist carbon rings decorated with heavier group 14 elements. Interestingly, these feature planar tetracoordinate carbons (ptCs) and result from the replacement five or six protons (H+) cyclopentadienyl anion (C5H5−) pentalene dianion (C8H62−) by three four E2+ dications (E = Si–Pb), respectively. The silicon derivatives are Si3C...

Journal: :International journal of advanced research 2022

This paper focuses on anti-reflective coatings monocrystalline silicon solar cells and the impact of front surface texturing. The reference wavelength is =700 nm, with its optimum refractive index (n = 3.7838) a reflectivity 33%. calculations were made basis layer thickness values indices that allow phase amplitude conditions chosen to be respected, namely (MgF2) (SiOxNy), (SiOx), (SiNx:H). Num...

2008
Corsin Battaglia Claude Monney Clément Didiot Eike Fabian Schwier Nicolas Mariotti Michael Gunnar Garnier Philipp Aebi

Si(331)-(12x1) is the only confirmed planar silicon surface with a stable reconstruction located between (111) and (110). We have optimized the annealing sequence and are able to obtain almost defect free, atomically precise surface areas approaching micrometer dimensions. The unprecedented perfection of the surface combined with its pronounced structural anisotropy makes it a promising candida...

Journal: :Nano letters 2008
Irene A Goldthorpe Ann F Marshall Paul C McIntyre

Analogous to planar heteroepitaxy, misfit dislocation formation and stress-driven surface roughening can relax coherency strains in misfitting core-shell nanowires. The effects of coaxial dimensions on strain relaxation in aligned arrays of Ge-core/Si-shell nanowires are analyzed quantitatively by transmission electron microscopy and synchrotron X-ray diffraction. Relating these results to repo...

Journal: :Journal of nanoscience and nanotechnology 2005
Hongguo Zhang Zhi Chen Tianxiang Li Kozo Saito

A one-dimensional array of nanopores horizontally aligned on a silicon substrate was successfully fabricated by anodic aluminum oxidation (AAO) using a modified two-step procedure. SEM pictures show clear nanostructures of well-aligned one-dimensional nanopore arrays without cracks at the interfaces of the sandwiched structures. The processes are compatible with the planar silicon integrated ci...

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