High quality polycrystalline diamond films grown on Si substrates by microwave plasma enhanced chemical vapor deposition were characterized in a far-infrared spectroscopic study. The spectroscopic transmissivity data were used to derive a model for the complex refractive index (n – ik) as a function of wavelength in the 10 to 200 cm-1 frequency regime. Similar transmissivity and reflectivity da...

Amorphous fluorinated silicon nitride films have been deposited with the variation of NF3 flow rate using SiH4, N2, Ar, and NF3 gases by inductively coupled plasma enhanced chemical vapor deposition for the first time, and the absolute composition, oxidation mechanism, and optical properties were investigated. The absolute composition including hydrogen was performed by means of elastic recoil ...

In this work, we model a radiofrequency discharge of hydrogenated silicon nitride in a capacitive coupled plasma reactor using Maxwellian and non-Maxwellian electron energy distribution function. The purpose is to investigate whether there is a real advantage and a significant contribution using non-Maxwellian electron energy distribution function rather than Maxwellian one for determining the ...

Two different techniques for the electronic surface passivation of silicon solar cells, the plasma-enhanced chemical vapour deposition of silicon nitride (SiN) and the fabrication of thin thermal silicon oxide/plasma SiN stack structures, are investigated. It is demonstrated that, despite their low thermal budget, both techniques are capable of giving an outstanding surface passivation quality ...

The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include depositio...

We present optical properties and microstructure analyses of hydrogenated silicon suboxide layers containing silicon nanocrystals (nc-SiOx:H). This material is especially adapted for the use as intermediate reflecting layer (IRL) in micromorph silicon tandem cells due to its low refractive index and relatively high transverse conductivity. The nc-SiOx:H is deposited by very high frequency plasm...

The plasma-enhanced chemical vapor deposition of aluminum-doped zinc oxide has been demonstrated for the first time at 800Torr and under 250 1C. A film resistivity of 3 10 2 O cm and a transparency of 95% from 375 to 2500 nm was obtained for deposition at 20mTorr diethylzinc, 1.0 Torr CO2, 799Torr He, a TMAl/DEZn ratio of 1:100, 41W=cm RF power, and 225 1C. The average aluminum concentration in...

We report in this letter the observation of folded acoustic phonons in hydrogenated nanocrystalline silicon/amorphous silicon multilayers with visible emission, which are prepared in a plasma enhanced chemical vapor deposition system. In the low-frequency range of 10–100 cm, the obtained Raman spectra clearly show some folded doublets from longitudinal acoustic phonons. Using the elastic contin...

The nanostructure of hydrogenated amorphous silicon–germanium alloys, a-Si12xGex :H, prepared by the hotwire deposition technique (x50.06– 0.79) and by the plasma enhanced chemical vapor deposition technique ~x50 and 0.50! was analyzed by anomalous small-angle x-ray scattering experiments. For all alloys with x.0 the Ge component was found to be inhomogeneously distributed with correlation leng...

Molecules are the smallest possible elements for electronic devices, with active elements for such devices typically a few Angstroms in footprint area. Owing to the possibility of producing ultrahigh density devices, tremendous effort has been invested in producing electronic junctions by using various types of molecules. The major issues for molecular electronics include (1) developing an effe...