This paper describes a process of numerical testing and optimization the ultrasonic gas meter channel. A conventional flowmeter requires large installation space due to quality stability velocity profile. Previously, shape inner channel was optimized reach suitable flow field for measurement. The goal this work is find an optimal design reduced size achieve stable profile with minimum disturban...

Channel measurement and modeling are important issues when designing ultra wideband (UWB) communication systems. A Precise model of the channel response is inevitable for designing a UWB telecommunication system. In this article signal propagation in indoor environment and LOS condition is evaluated and the appropriate model of this scenario is presented. Parameters such as the power delay prof...

As MOSFET dimensions continue to shrink, the promise of further optimizing device performance and the problem of the Reverse Short Channel Effect point to the need for an understanding of the effect of laterally non-uniform profiles on device output characteristics. A semi-analytical model is developed to calculate the current of a device with a laterally nonuniform channel profile, from which ...

This paper proposes a new channel modelling method for powerline communications networks based on the multipath profile in the time domain. The new channel model is developed to be applied in a range of Powerline Communications (PLC) research topics such as impulse noise modelling, deployment and coverage studies, and communications theory analysis. To develop the methodology, channels are cate...

Beams injected into a linear focusing channel typically have some degree of space-charge nonuniformity. In general, injected particle distributions with systematic charge nonuniformities are not equilibria of the focusing channel and launch a broad spectrum of collective modes. These modes can phase-mix and have nonlinear wave-wave interactions which, at high space-charge intensities, results i...

in biaxially strained p-mosfet with si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. in this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . using simulation the impact of this method on the parasit...