نتایج جستجو برای: rashba

تعداد نتایج: 1979  

2014
M. I. Alomar David Sánchez

We investigate the transport properties of a graphene layer in the presence of Rashba spin-orbit interaction. Quite generally, spin-orbit interactions induce spin splittings and modifications of the graphene band structure. We calculate within the scattering approach the linear electric and thermoelectric responses of a clean sample when the Rashba coupling is localized around a finite region. ...

2015
Joonbum Park Kyung-Hwan Jin Y. J. Jo E. S. Choi W. Kang E. Kampert J.-S. Rhyee Seung-Hoon Jhi Jun Sung Kim

We report the pressure-induced topological quantum phase transition of BiTeI single crystals using Shubnikov-de Haas oscillations of bulk Fermi surfaces. The sizes of the inner and the outer FSs of the Rashba-split bands exhibit opposite pressure dependence up to P = 3.35 GPa, indicating pressure-tunable Rashba effect. Above a critical pressure P ~ 2 GPa, the Shubnikov-de Haas frequency for the...

2009
Matthias Scheid Junsaku Nitta Klaus Richter

We investigate the transport properties of narrow quantum wires realized in disordered two-dimensional electron gases in the presence of k-linear Rashba and Dresselhaus spin-orbit interaction (SOI), and an applied in-plane magnetic field. Building on previous work [Scheid, et al., PRL 101, 266401 (2008)], we find that in addition to the conductance, the universal conductance fluctuations also f...

2017
Mohammad Mehdi Ramin Moayed Thomas Bielewicz Martin Sebastian Zöllner Carmen Herrmann Christian Klinke

Employing the spin degree of freedom of charge carriers offers the possibility to extend the functionality of conventional electronic devices, while colloidal chemistry can be used to synthesize inexpensive and tunable nanomaterials. Here, in order to benefit from both concepts, we investigate Rashba spin-orbit interaction in colloidal lead sulphide nanosheets by electrical measurements on the ...

Journal: :Physical review letters 2007
Esmerindo Bernardes John Schliemann Minchul Lee J Carlos Egues Daniel Loss

We investigate the spin-orbit (SO) interaction in two-dimensional electron gases in quantum wells with two subbands. From the 8x8 Kane model, we derive a new intersubband-induced SO term which resembles the functional form of the Rashba SO but is nonzero even in symmetric structures. This follows from the distinct parity of the confined states (even or odd) which obliterates the need for asymme...

2005
E. Ya. Sherman Jairo Sinova

We investigate the spin dynamics and relaxation in remotely doped two dimensional electron systems where the dopants lead to random fluctuations of the Rashba spin-orbit coupling. Due to the resulting random-spin precession, the spin-relaxation time is limited by the strength and spatial scale of the random contribution to the spin-orbit coupling. We concentrate on the role of the randomness fo...

2017
A. De Martino Alessandro De Martino R. Egger

We investigate the electronic properties of graphene in a magnetic and a strain-induced pseudo-magnetic field in the presence of strong spin-orbit interactions (SOI). For a homogeneous field we provide analytical results for the Landau level eigenstates for arbitrary intrinsic and Rashba SOI, including also the effect of a Zeeman field. We then study the edge states in a semi-infinite geometry ...

Journal: :Physical review letters 2015
A M Kamerbeek P Högl J Fabian T Banerjee

We show electric field control of the spin accumulation at the interface of the oxide semiconductor Nb-SrTiO_{3} with Co/AlO_{x} spin injection contacts at room temperature. The in-plane spin lifetime τ_{∥}, as well as the ratio of the out-of-plane to in-plane spin lifetime τ_{⊥}/τ_{∥}, is manipulated by the built-in electric field at the semiconductor surface, without any additional gate conta...

2008
C. P. Moca D. C. Marinescu

Abstract The Kubo formula is used to calculate the spin-Hall conductivity σsH in a spin-polarized twodimensional electron system with Rashba-type spin-orbit interaction. As in the case of the unpolarized electron system, σsH is entirely determined by states at the Fermi level, a property that maintains in the presence of magnetic impurities. In the clean limit, the spin-Hall conductivity decrea...

Journal: :Physical review letters 2006
Wei Ren Zhenhua Qiao Jian Wang Qingfeng Sun Hong Guo

We report a theoretical investigation on spin-Hall conductance fluctuation of disordered four-terminal devices in the presence of Rashba or/and Dresselhaus spin-orbital interactions in two dimensions. As a function of disorder, the spin-Hall conductance GsH shows ballistic, diffusive, and insulating transport regimes. For given spin-orbit interactions, a universal spin-Hall conductance fluctuat...

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