In this paper, a 4-channel, 100 Gbps inductorless optical receiver analog front-end fabricated in 55 nm bulk-CMOS technology is presented. Active feedback technique widely adopted to improve the performance of without area-occupied inductors. To alleviate voltage headroom stress local loop traditional regulated cascode transimpedance amplifier, common gate amplifier inserted before source stage...

This article presents a comprehensive study on the occurrence mechanism, instability analysis, and suppression methods of self-sustained turn- off oscillation, which occurs cascode gallium nitride high electron mobility transistors (cascode GaN HEMTs). In beginning, oscillation waveforms are an...

We certify that this work has passed the scholastic standards requested by the Information and Communications University as a thesis for the Abstract The commercialization of Ultra-WideBand (UWB) ranging from 3.1-10.6 GHz by Federal Communication Commission (FCC) has recently emerged as a promising technology for short-range wireless data communications. The applications of wireless data commun...

Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), exhibit superior physical properties demonstrate great potential for replacing conventional (Si) semiconductors with WBG technology, pushing the boundaries of power devices to handle higher blocking voltages, switching frequencies, output levels, operating temperatures. However, tradeoffs in performance ...

This paper presents a third-order Butterworth low-pass filter (LPF) with continuously tuning capability to be used in the receiver front-end for Wireless Body Area Network (WBAN). To realize bandwidth multi-standard operation WBAN receivers ultra-low power consumption and minimized area, novel transconductor-capacitor (Gm-C) is proposed. The proposed transconductor core uses an additional gain ...

This work presents a comparative study of the transcapacitances an asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs with different gate lengths. analysis was done by means two-dimensional numerical simulations. Simulated results show influence others on gate-to-gate capacitance for ASC SOI device GC device.

The rapid growth of the hybrid electric vehicles (HEVs) has been driving the demand of high temperature automotive electronics target for the engine compartment, power train, and brakes where the ambient temperature normally exceeds 150°C. An operational transconductance amplifier (OTA) is an essential building block of various analog circuits such as data converters, instrumentation systems, l...

This paper presents the evaluation of heat generation behavior and related thermal measurement analysis of packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) cascaded with low-voltage MOSFET and SiC SBD. Since thermal management is extremely important for high power packaging, a hybrid integration of the GaN HEMTs onto a DBC substrate and metal case is proposed. We investi...