Submitted for the MAR15 Meeting of The American Physical Society Evolution of Ni nanofilaments and electromagnetic coupling in the resistive switching of NiO1 YUXIANG LUO, Tsinghua University, China, DEPARTMENT OF PHYSICS, TSINGHUA UNIVERSITY, BEIJING, CHINA TEAM — Resistive switching effect in conductor/insulator/conductor thin-film stacks is promising for resistance random access memory with ...

Comparison of resistive switching memory characteristics using copper (Cu) and aluminum (Al) electrodes on GeOx/W cross-points has been reported under low current compliances (CCs) of 1 nA to 50 μA. The cross-point memory devices are observed by high-resolution transmission electron microscopy (HRTEM). Improved memory characteristics are observed for the Cu/GeOx/W structures as compared to the ...

Yttria-stabilised hafnia ceramics are high temperature oxide ion conductors that lose a small amount of oxygen, both at temperatures and on application dc bias. At zero applied bias, p-type conductivity is present. This increases with low bias attributed to reactions initiated the positive electrode/ceramic interface. With further increase in n-type negative After short time lapse, overall rapi...

Resistive switching memories are nonvolatile memory cells based on nano-ionic redox processes and offer prospects for high scalability, ultrafast write and read access, and low power consumption. In two-terminal cation based devices a nanoscale filament is formed in a switching material by metal ion migration from the anode to the cathode. However, the filament growth and dissolution mechanisms...

ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in 'reading' and 'writing' operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding...

The memristor has attracted great attention in recent years due to the high demand of nano-sized high performance nonvolatile memories. Furthermore, recent breakthrough in nanotechnology makes the fabrication of the memristor a reality. In this work, the switching mechanism and the resistive switching behavior that take place in the memristor are introduced. The ionic transportation mechanism i...