Effect of polarity in substrate for ZnO growth was researched. The zinc oxide films were deposited on SiOC/Si wafer by a RF magnetron sputtering system. SiOC film was also deposited by RF magnetron sputtering to obtain a low temperature process. Polarity in SiOC film changed with increasing the oxygen gas flow rates, and the chemical shift in the PL spectra was observed because of lowering the ...
