A brief overview on memory architecture and processes for several conventional types within the MOS family. Current trends and limitations would be discussed before leading to some insight on the next generation of memory products.

We review recent progress made in the field of semiconductor spintronics, a branch of semiconductor electronics where both charge and spin degrees of freedom play an important role in realizing unique functionalities. We first describe the new spin-dependent phenomena found in semiconductors including carrier-induced ferromagnetism in III–V compounds, followed by an account of our current under...

Semiconductor flash memory is an indispensable component of modern electronic systems. The minimum feature size of an individual CMOSFET has shrunk to 15nm with an equivalent gate oxide thickness (EOT) of 0.8nm in 2001. However, semiconductor flash memory scaling is far behind CMOS logic device scaling. For example, the EOT of the gate stack in semiconductor flash memory is still more than 10nm...

Irradiated suspensions of sem~ single crystal and polycrystalline conductor powders, e.g., Ti02, have semiconductor materials currently been employed in such heterogeneous being investigated. Measurements photo processes as the oxidation of involving such slurry electrodes cyanide, the decomposition of carare of use not only for the charboxylic acids, and the deposition acterization of the powd...

introduction: during radiotherapy, high accuracy in the dose delivery is required because there is a strong  relationship between the absorbed dose, local tumor control and particularly the normal tissue damage. in  many institutions, in vivo dosimetry using diodes is performed to check the actual dose delivered. in general,  the uncertainty in the dose delivered should fall within  ± 5% of the...

in this paper, the electronic eigenstates and energy spectra of single and two-interacting electrons confined in a concentric double quantum rings with a perpendicular magnetic field in the presence of         on-center donor and acceptor impurities are calculated using the exact diagonalization method. for a single electron case, the binding energy of on-center donor and acceptor impurities ar...

This work describes the optical and structure properties of nickel sulfide and cobalt sulfide nanoparticles in ZSM-5 zeolite. The samples were obtained by sulfidation of the Ni2+ and Co2+ ion-exchange ZSM-5 zeolites in a Na2S solution at room temperature. The optical properties of the samples were studied by UV-visible spectroscopy. Their crystalline structure and morphology were studied by X-r...