449 Abstract— We have analyzed channel doping and dimensions(channel length, width and thickness) for the optimum subthreshold characteristics of DG(Double Gate) MOSFET based on the model of MicroTec 4.0. Since the DGMOSFET is the candidate device to shrink short channel effects, the determination of design rule for DGMOSFET is very important to develop sub-100nm devices for high speed and low ...

Temperature and doping dependencies of electron mobility in InP semiconductor has been calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are included in the calculation. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low tempera...

Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The...

We demonstrate theoretically that quantum dots in bilayers of graphene can be realized. A position-dependent doping breaks the equivalence between the upper and lower layer and lifts the degeneracy of the positive and negative momentum states of the dot. Numerical results show the simultaneous presence of electron and hole confined states for certain doping profiles and a remarkable angular mom...

It is hypothesized that a highly ordered, relatively defect-free dilute magnetic semiconductor system should act as a weak ferromagnet. Transition-metal-doped ZnO nanowires, being single crystalline, single domain, and single phase, are used here as a model system for probing the local dopant coordination environments using X-ray absorption spectroscopy and diffraction. Our X-ray spectroscopic ...

An analysis of wave front motion in weakly coupled doped semiconductor superlattices is presented. If a dimensionless doping is sufficiently large, the superlattice behaves as a discrete system presenting front propagation failure and the wave fronts can be described near the threshold currents J(i) (i=1,2) at which they depin and move. The wave front velocity scales with current as |J-J(i)|(1/...

We present a versatile simulation based optimization environment. Arbitrary simulators can be integrated into this environment like in our case for Technology Computer Aided Design (TCAD) applications. The optimizer module is integrated in a simulation environment which performs job farming and load balancing and also extracts results from simulation data. In an example we present a doping prof...

Zinc oxide (ZnO) is a promising metal oxide semiconductor with various applications, especially in the photocatalytic destruction of environmental pollutants. However, this nanoparticle has some limitations, such as poor dispersion, aggregation, and a wide energy gap. As such, the doping of metal oxide semiconductor has been strongly recommended. Addition of manganese (Mn) has proven effective ...