Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission spectra. Semiconductor nanocrystals, however, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in the generation of bright, sensitive, extremely photo-stable and biocompat...

The Semiconductor Electronics Division at the National Institute of Standards and Technology (NIST) hosted an International Conference on Narrow-Gap Semiconductors and Related Materials in Gaithersburg, MD on June 12-15, 1989. A brief background on narrow-gap semiconductors (NGSs) is given in this paper, along with an overview of the conference itself. The major section of this report is devote...

Extraordinarily high mobility of Si and Ge atoms at semiconductor (Si, Ge)-metal (Al) interfaces is observed at temperatures as low as 80 K during thin metal film deposition. In situ x-ray photoemission spectroscopic valence-band measurements reveal a changed chemical bonding nature of the semiconductor atoms, from localized covalentlike to delocalized metalliclike, at the interface with the Al...

We have investigated the properties of structures incorporating graded index materials with parabolic permittivity profile. Surface-plasmon-polaritons at the interface of graded index material and semiconductor are studied by means of numerical simulations. We analyze the dependence of the dispersion characteristics on the graded index material profile as well as on the semiconductor concentrat...

In the paper, a new physical principle for designing of a new optoelectronic device and its theoretical description are presented. The basic idea of the device consists in providing inside a multilayered semiconductor structure such conditions for photoelectrons that enable sequential avalanche multiplication of electrons and holes inside two depletion slabs created around p-n junctions of a re...

We analyze multi-longitudinal-mode semiconductor lasers experimentally. We show that the intensity of each mode displays large amplitude oscillations but obeys a highly organized antiphase dynamics leading to an almost constant total intensity output. For each mode, regular switching is observed in the megahertz range, while the optical frequency as a function of time follows a well defined seq...