Excited-state relaxations in molecules are responsible for a red shift of the absorption peak with respect to the emission peak (Franck-Condon shift). The magnitude of this shift in semiconductor quantum dots is still unknown. Here we report first-principle calculations of excited-state relaxations in small (diameter ≤ 2.2 nm) Si nanocrystals, showing that the Franck-Condon shift is surprisingl...

NiSi nanocrystals of high density and good uniformity were synthesized by vapor–solid–solid growth in a gas source molecular beam epitaxy system using Si2H6 as Si precursor and Ni as catalyst. A metal– oxide–semiconductor memory device with NiSi nanocrystal–Al2O3/SiO2 double-barrier structure was fabricated. Large memory window and excellent retention at both room temperature and high temperatu...

We present the first semiconductor nanocrystal films of nanoscale dimensions that are electrically conductive and crack-free. These films make it possible to study the electrical properties intrinsic to the nanocrystals unimpeded by defects such as cracking and clustering that typically exist in larger-scale films. We find that the electrical conductivity of the nanoscale films is 180 times hig...

In this study we demonstrate the synthesis of quaternary semiconductor nanocrystals of stannite Cu2FeSnS4/rhodostannite Cu2FeSn3S8 (CFTS) via mechanochemical route using Cu, Fe, Sn and S elements as precursors in one-pot experiments. Methods of X-ray diffraction (XRD), nitrogen adsorption, high-resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM)...

Transition metal doped semiconductor nanocrystals (d-dots) possess fundamentally different emission properties upon photo- or electroexcitation, which render them as unique emitters for special applications. However, in comparison with intrinsic semiconductor nanocrystals, the potential of d-dots has been barely realized, because many of their unique emission properties mostly rely on precise c...

Discrete floating gates, nanocrystals or nitride traps, of Flash memory devices enable aggressive scaling of the tunneling oxide by relieving the total charge loss concern of the continuous floating gate [1]. However, a trade-off between the retention and program/erase (P/E) characteristics still remains. Nanocrystal memories with the direct tunneling oxide can still suffer serious retention de...

In the past decade, semiconductor nanoparticles have attracted much attention arising from the fundamental scientific interest in understanding the transition of material properties from the bulk to molecular-like clusters and their potential applications. The main issue in the preparation of semiconductor nanocrystals is a careful control of particle size and, even more important, their size d...

Carrier multiplication describes an interesting optical phenomenon in semiconductors whereby more than one electron-hole pair, or exciton, can be simultaneously generated upon absorption of a single high-energy photon. So far, it has been highly debated whether the carrier multiplication efficiency is enhanced in semiconductor nanocrystals as compared with their bulk counterpart. The controvers...

Postsynthetic chemical transformations of colloidal nanocrystals, such as ion-exchange reactions, provide an avenue to compositional fine-tuning or to otherwise inaccessible materials and morphologies. While cation-exchange is facile and commonplace, anion-exchange reactions have not received substantial deployment. Here we report fast, low-temperature, deliberately partial, or complete anion-e...

Multiple exciton generation, the creation of two electron-hole pairs from one high-energy photon, is well established in bulk semiconductors, but assessments of the efficiency of this effect remain controversial in quantum-confined systems like semiconductor nanocrystals. We used a photoelectrochemical system composed of PbS nanocrystals chemically bound to TiO(2) single crystals to demonstrate...