A compact tunable 10 W picosecond source based on Yb-doped fiber amplification of gain switch laser diode has been demonstrated. A gain switch semiconductor laser diode was used as the seed source, and a multi-stage single mode Yb-doped fiber preamplifier was combined with two large mode area double-clad Yb-doped fiber main amplifiers to construct the amplification system. The tunable pulses wi...

James R. Collington Mark P. Dames William A. Crossland Cambridge University Engineering Department Trumpington Street Cambridge CB2 1PZ United Kingdom Abstract. Large broadband asynchronous transfer mode (ATM) switching nodes require novel hardware solutions that could benefit from the inclusion of optical interconnect technology, since electronic solutions are limited by pin out and by the cap...

A new type of drivers for light emitting diodes (LEDs) is introduced based on the switched-capacitor frequency modulation. In contrast to conventional constant dc current drivers, the current pulse is provided by this new switched-capacitor LED driver. In the present driver, the charging capacitor is charged and discharged through a LED and the current flow direction is controlled by a metal ox...

Programmable logic arrays (PLA) constitute a promising architecture for developing increasingly complex and functional circuits through nanocomputers from nanoscale building blocks. Here we report a novel one-dimensional PLA element that incorporates resistive switch gate structures on a semiconductor nanowire and show that multiple elements can be integrated to realize functional PLAs. In our ...

Introduction: As the feature sizes of semiconductor devices decrease, their behaviour becomes increasingly ‘probabilistic’ owing to sources such as thermal noise [1], ground bounce [2] and process variations [3]. Enhancing the robustness of circuits and systems to this probabilistic behaviour introduces some redundancy. Thus, there is a fundamental tradeoff between robustness and energy efficie...

This paper discusses free carrier generation by pulsed laser fields as a mechanism to switch the optical properties of semiconductor photonic crystals and bulk semiconductors on an ultrafast time scale. Requirements are set for the switching magnitude, the time-scale, the induced absorption as well as the spatial homogeneity, in particular for silicon at λ = 1550 nm. Using a nonlinear absorptio...

The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-...

We present an 8 × 8 wavelength-routing switch (WRS) that monolithically integrates tunable wavelength converters (TWCs) and an 8 × 8 arrayed-waveguide grating. The TWC consists of a double-ringresonator tunable laser (DRR TL) allowing rapid and stable switching and a semiconductor-optical-amplifier-based optical gate. Two different types of dry-etched mirrors form the laser cavity of the DRR TL...

System-on-a-chip (SoC) has emerged to become a cost-effective approach for embedded systems design with rapid advance of semiconductor technology. It allows designers to integrate a number of heterogeneous IP blocks together based on a system interconnect. However, traditional dedicated wiring as the system interconnect has many shortcomings, such as non-scalable global wire delay, failure to a...

Power Semiconductor switches of active rectifier are characterized by highly nonlinear property, resulting in high harmonic distortion and high ripple voltage on the DC side. This paper presents advanced control using switch function and fuzzy logic for compensating nonlinear behaviour. The system applies switch function of time as the input of control strategy, instead of current and voltage i...