Luisa Petti, Niko Münzenrieder, 2 Christian Vogt, Hendrik Faber, Lars Büthe, Giuseppe Cantarella, Francesca Bottacchi, Thomas D. Anthopoulos, and Gerhard Tröster Electronics Laboratory, Swiss Federal Institute of Technology, Zürich, Switzerland Sensor Technology Research Centre, University of Sussex, Falmer, United Kingdom Department of Physics and Centre for Plastic Electronics, Imperial Colle...

Activation Energy is an important feature in determining the formation of ohmic contact on a semiconducting material. Activation energy depends on workfunction of the semiconductor. Thus, there is a good co-relation between the ohmicity, activation energy and workfunction. In this work, Cadmium Sulphide (CdS) thin film of 2 μm thickness is the semiconducting material fabricated using Chemical V...

The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a...

Diffractive structures such as pillar gratings are a promising way of coupling light into or out of thin semiconductor devices, for applications in thin film solar cells and light-emitting diodes. In this paper we show that the diffuse transmittance behavior of pillar gratings can be understood using the concept of grating mode interference and that the optimum heights of the grating and an est...

Transfer printing methods are used to pattern and assemble monolithic carbon nanotube (CNT) thin-film transistors on large-area transparent, flexible substrates. Airbrushed CNT thin-films with sheet resistance 1 kX sq 1 at 80% transparency were used as electrodes, and high quality chemical vapor deposition (CVD)-grown CNT networks were used as the semiconductor component. Transfer printing was ...

Using high-resolution transmission electron microscopy we have studied atomic structure of interfaces between epitaxial thin films of metals, insulators or semiconductors on semiconductors. For epitaxial cobalt and nickel disilicide we find exceptionally uniform interfaces with a significant dependence of the schottky barrier height on interface structure. For epitaxial alkaline-earth fluorides...

In this review we discuss the advances in use of GaN and ZnO-based solid-state sensors for gas sensing applications. AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization -induced two dimensional electron gas (2DEG). Furthermore, spontaneous and piezoelectric polarization induced surface and interface charges can ...

Despite their potential use as pixel-switching elements in displays, the bias and light instability of mixed oxide semiconductor thin-film transistors (TFTs) still limit their application to commercial products. Lack of reproducible results due to the sensitivity of the mixed oxides to air exposure and chemical contamination during or after fabrication hinders any progress towards the achieveme...

Organic thin-film transistors (TFTs) are of interest for a variety of large-area electronics applications, such as flexible active-matrix displays and conformable sensor arrays [1]. Among the challenges in the development of high-performance organic TFTs, especially on flexible polymeric substrates, is to realize organic TFTs that simultaneously provide a large field-effect mobility, a large on...