نتایج جستجو برای: si1
تعداد نتایج: 1017 فیلتر نتایج به سال:
A novel structure of double-gate (DG) NMOSFET, which is formed by a strained silicon (Si) channel by using Si/Si1−xGex/Si, is proposed for the improvement of device characteristics. For analyzing the nano-scale DG MOSFET, a two-dimensional quantum-mechanical (QM) approach for solving the coupled Poisson-Schrödinger equations is reported. The advantages of a strained Si channel of DG MOSFET are ...
In this work, we have developed two different fabrication processes for relaxed Si1xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by “smart-cut” approach utilizing hydrogen implantation. Etch-back approach produces SGOI substrate with less defects in SiGe film, but the SiGe film uniformity is inferior. “Smart-cut” approach has better control on the SiGe...
In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si1-x Ge x growth (0.35 ≤ × ≤ 0.40) with boron concentration of 1-3 × 1020 cm-3 was used to elevate the source/drain. The main focus was optimization of the growth parameters to improve the epitaxial quality where the high-...
Effect of uniaxial strain on characteristic frequency of scaled SiGe HBT with embedded stress raiser
In order to further improve the high-frequency characteristics of highly scaled SiGe HBT and consider compatibility with mature CMOS technology, a new structure is proposed by introducing an embedded Si1−yGey stress raiser produce additional uniaxial in bulk collector region. The energy-band configuration multi-layered emitter has been investigated estimation strain effect, then influence on el...
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