• Challenge to identify Ru silicide in photoemission resolved using plasmon features. formation induces loss peak shift of several electronvolts. Experiment and theory show excellent agreement for the identification silicides. Results from model system Ru-Si expected be applicable many metal The phase composition transition silicides are challenging with common surface analysis techniques such ...

Thin-body transistors with silicide source/drains were fabricated with gate-lengths down to 15nm. Complementary low-barrier silicides were used to reduce contact and series resistance. Minimum gate-length transistors with Tox=40Å show PMOS |Idsat|=270μA/μm and NMOS |Idsat|=190μA/μm with Vds=1.5V, |Vg-Vt|=1.2V and, Ion/Ioff>10 . A simple transmission model, fitted to experimental data, is used t...

Platinum (Pt) has beenknown as a catalyst material for vapor-liquid-solid (VLS) synthesis since the mid 1960s with the potential to grow electronic grade silicon nanowires (SiNWs). In contrast to gold-based growth, Pt-catalyzed SiNW synthesis has rarely been studied, most likely due to higher synthesis temperatures and the formation of multiple Pt silicide phases. Here we present the growth of...

We report a multi tunnelling junction characteristic in P-type porous silicon core coated with thin film platinum silicide. Detailed analysis of electron transport in this device admits the existence of a structure like a twodimensional Multi Tunnelling Junctions (2D-MTJ) clearly originate from the sharp edge of created platinum silicide on porous surface. Furthermore, using SIMON simulator, el...

Abstrac: In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process parameters on threshold voltage was determined by using analysis of variance (ANOVA). The virtual f...