A model describing the mobility tensor for electrons in strained Si layers as a function of strain is presented. It includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, and doping dependence. The dependence of the electron mobility components on the orientation of the underlying SiGe layer is taken into account by performing a transforma...

A model describing the anisotropic electron mobility in strained Si has been developed. Our analytical model includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, and doping dependence. Monte Carlo simulations were performed to verify the results for the complete range of Ge contents and for a general orientation of the SiGe buffer. Our m...

The ParaSCOPE project has developed and demonstrated new concepts in creating a Shared COmputational Prototyping Environment (i.e. SCOPE). The key contributions include: common procedural interfaces (API) and shared information about wafer representations (SWR); use of these interfaces and services in creating a heterogeneous Technology-CAD demonstration vehicle; ability to rapidly prototype pa...

Bonded silicon-on-insulator (SOI) wafers have the capability of realizing monolithic pixel devices, where the silicon resistivity is optimized separately for the electronics and detector parts. Using UNIBOND wafers, we are developing monolithic pixel devices fabricated with OKI Semiconductor 0.20 mm FD-SOI technology. A set of PMOS and NMOS transistors were irradiated with protons in order to i...

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  Three different materials (aluminum, ferro -silicon and silicon) were used as antioxidants in order to prevent the decarburization process and to keep and/or increase the final properties in MgO-C refractories. Their effects were compared by measuring the physical and mechanical properties as well as oxidation and the resultant phases and microstructures, in the temperature range of 200-1600 ...