Wavelength-scale optical modulators are essential building blocks for future on-chip optical interconnects. Any modulator design is a trade-off between bandwidth, size and fabrication complexity, size being particularly important as it determines capacitance and actuation energy. Here, we demonstrate an interesting alternative that is only 3 μm long, only uses silicon on insulator (SOI) materia...

In this study, we have investigated photonic crystal (PhC) nanocavities for biosensing applications. The device architecture consists of a PhC waveguide with a defect line for guiding the transmission of light. Resonant nanocavities are coupled to the PhC waveguide by changing the radius of a hole adjacent to the defect line. The devices are fabricated on silicon-on-insulator (SOI) wafers. Prel...

Recent developments in silicon based optoelectronics relevant to fiber optical communication are reviewed. Siliconon-insulator photonic integrated circuits represent a powerful platform that is truly compatible with standard CMOS processing. Progress in epitaxial growth of silicon alloys has created the potential for silicon based devices with tailored optical response in the near infrared. The...

Silicon microactuators capable of very long travel are described. The design is based on a laterally resonant cantilever, driven by an electrothermal shape bimorph located at the root. Performance characteristics are given for deep structures fabricated in bonded silicon-on-insulator material. Peak-to-peak displacements of more than 500 μm are obtained with cantilevers of 14 mm length, 30 μm wi...

We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler ( 5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 m) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumpe...

Our recent results on the demonstration of on-chip mode-division multiplexing functionalities are reviewed, with a special emphasis on the feasibility of nonlinear all-optical signal processing on the silicon-on-insulator (SOI) platform. Mode-selective parametric processes are demonstrated in a 4-mm long SOI waveguide. OCIS codes: (130.3120) Integrated optics devices; (030.4070) Modes; (130.740...

The combination of silicon-on-insulator (SOI) substrates with ultrathin Si and insulator layers opens new opportunities for quantum effect and hot-electron devices. Unlike their III–V predecessors, these devices have the crucial advantage of potential integrability with dominant silicon technology. We discuss three examples of such SOI devices: a three-terminal real-space transfer transistor wi...

In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

In this work, we demonstrate mechanically flexible extremely thin silicon on insulator (ETSOI) ring oscillators with a stage delay of 16 ps at a power supply voltage of 0.9 V. Extensive electrical analyses of the flexible ETSOI devices reveal the unchanged properties of the devices during the layer transfer process. Furthermore, we discuss the use of flexible silicon and gallium arsenide photov...

In this paper, we extract the mobility of ultra-thin, body buried oxide and fully depleted silicon-on-insulator MOSFET, for different front and back-gate configurations. The mobility values are found by using the Capacitance Gate Voltage and Current Gate Voltage characteristics. In addition, the maximum electron mobility is calculated for both configurations: SiON/Si (front-gate) and SiO2/Si (b...