The in-plane transport properties of a strained ( 100) Si layer on a relaxed Sii -XGe, substrate are studied with an ensemble Monte Carlo technique. Similar velocity (-field) characteristics are found for strained Si with any valley splitting energy AE)O. 1 eV. These phonon-limited electron mobilities reach 4000 cm2/V s at 300 K, and 23 000 cm’/v s at 77 K. There is only a slight increase in th...

The effect of gravity and thermal expansion on the propagation of a triple flame in a horizontal channel. Combustion and Flame Submitted (2013). [3] Al-Malki, F and Daou, J. Triple-flame propagation against a Poiseuille flow in a channel with porous walls. Submitted (2013). [4] Daou, J. Strained premixed flames: effect of heat-loss, preferential diffusion, and the reversibility of the chemical ...

A complete semi-analytical model is proposed for the simulation of the electronic, mechanical and piezoelectric properties of narrow gap strained semiconductor quantum nanostructures. A transverse isotropic approximation for the strain and a new axial approximation for the strained 8x8 Hamiltonian are proposed. It is applied extensively to the case of InAs/InP quantum dots (QD). Symmetry analys...

The electronic structure of strained and unstrained Gd(0001) has been studied with spin-polarized photoemission spectroscopy and spin-polarized inverse photoemission spectroscopy. In this work, we observed that relaxation of the expansively strained in-plane crystal lattice constant, of Gd(0001) on Mo(112), significantly diminishes the differences in the electronic structure from that observed ...