In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

Accumulation of trap charges at the semiconductor and oxide interface is most dominating factor cannot be neglected as it degrades device performance reliability. This manuscript, presents detailed investigation to analyze impact (ITCs) on parameters proposed i.e., heterogeneous dielectric dual metal gate step channel TFET (HD DMG SC-TFET). The comparative study conducted with TEFT (DMG shows i...

The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. operation the OFET depends on two essential parameters: insulation between semiconductor layer electrode capacitance insulator. In this work, electrical behavior a pentacene-based with top contact / bottom was studied. Organic polyvinyl al...

We analyze the electric potential and field, polarization charge, differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which gate insulator consists thin layers dielectric SiO2 weak ferroelectric HfO2. It appeared possible to achieve quasi-steady-state negative (NC) HfO2 layer, , if layer thickness is close critical size-induced ferroelectric-para...

Abstract Electrolyte-gated transistors can function as switching elements, artificial synapses and memristive systems, could be used to create compact powerful neuromorphic computing networks. However, insight into the underlying physics of such devices, including complex ion dynamics resulting capacitances, remains limited. Here we report a concise model for transient ion-dynamic capacitance i...

Here, we report the high-performance amorphous gallium indium tin oxide (a-IGTO) thin-film transistor (TFT) with zirconium aluminum (ZAO) gate insulator by spray pyrolysis. The Ga ratio in IGTO precursor solution varied up to 20%. pyrolyzed a-IGTO a high-k ZAO (GI) exhibits field-effect mobility (μFE) of 16 cm2V−1s−1, threshold voltage (VTH) −0.45 V subthreshold swing (SS) 133 mV/dec., and ON/O...

<span>This paper studies the impact of fin width channel on temperature and electrical characteristics field-effect transistor (FinFET). The simulation tool multi-gate field effect (MuGFET) has been used to examine FinFET characteristics. Transfer with various temperatures (W<sub>F</sub>=5, 10, 20, 40, 80 nm) are at first simulated in this study. results show that increasing e...

A Hetero Dielectric Tunnel field effect transistor with the spacer on both sides of gate is proposed in this paper. The performance and characteristics using ATLAS Technology Computer-Aided Design 5nm regime were analyzed. band-to-band tunneling leakage current will be reduced by introducing heterojunction hetero dielectric material structure. In transistor, double metal high-k improves high su...