The III–V InP/InGaAsP/InGaAs material family is important for photonic devices due to its optical emission and absorption in the 1.55 1.3 μm telecommunication bands interconnects. However, InGaAsP/InGaAs generally suffer from relatively high surface recombination velocity—compared Si [Das et al., 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (IEEE, Calgary, AB, 2020), pp. 1167–1170]...
