We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows ...

We report on the application of a laser rapid thermal annealing technique for iterative bandgap engineering at selected areas of quantum semiconductor wafers. The approach takes advantage of the quantum well intermixing (QWI) effect for achieving targeted values of the bandgap in a series of small annealing steps. Each QWI step is monitored by collecting a photoluminescence map and, consequentl...

Laser annealing of shape memory alloy thin films provides new opportunities in actuator design and fabrication for microelectromechanical systems applications. In this paper, we present a three-dimensional thermal model to simulate the crystallization process when a laser beam is swept across an amorphous NiTi thin film. Experimental crystallite nucleation and growth rates are included in the m...

Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from 400 °C to 700 °C in increments of 100 °C using a rapid thermal a...

Crystalline yttria-stabilized zirconia (YSZ) gate dielectrics have been successfully fabricated on silicon wafers. By carefully controlling the annealing condition, the crystalline YSZ gate dielectrics show promising performances following the rapid thermal annealing process. The equivalent electrical oxide thickness only increases about 2.0 Å after annealing in O2 gas, while the leakage curren...

Dopant activation annealing of an elevated Ge-S/D structure formed on Si was investigated for application in advanced CMOSFET fabrication. Due to the low melting point of Ge, dopant activation was observed below 600 8C. However, the low temperature annealing process resulted in high reverse-bias p–n junction leakage. A thermal process budget of 900 8C, 60 s was found to be the minimum necessary...

We report on the terahertz (THz) emission from GaSb surfaces with modified surface stochiometry. While very weak emission is observed from virgin GaSb wafers, the emission is significantly increased by a single thermal treatment of the wafers. Optimum emission is observed for 500 °C thermal annealing. The reason for the THz emission is a surface electric field induced by thermal decomposition o...

Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and depositi...

Nanocrystalline zinc ferrite (ZFO) has been synthesized from metal acetylacetonates by microwave irradiation for 5 min in the presence of a surfactant. The as-prepared material is ZFO and has been subjected in air to conventional furnace annealing and to rapid annealing at different temperatures. Both annealing protocols lead to well-crystallized ZFO, with crystallite sizes in the range 8–20 nm...