Three new ruthenium amidinate complexes were prepared: tris(diisopropylacetamidinato)-ruthenium(III), Ru(iPrNC(Me)NiPr)3 4; bis(diisopropyl-acetamidinato)ruthenium(II) dicarbonyl, Ru( iPrNC(Me)NiPr)2(CO)2 5; and bis(ditert-butylacetamidinato)ruthenium(II) dicarbonyl, Ru(tBuNC(Me)NtBu)2(CO)2 6. They have been synthesized and characterized by H NMR, TG and X-ray structure analysis. These three co...

the effect of temperature variation on the growth of carbon nanotubes (cnts) using thermal chemical vapor deposition (tcvd) is presented. nickel and cobalt (ni-co) thin films on silicon (si) substrates were used as catalysts in tcvd technique. acetylene gas was used in cnts growth process at the controlled temperature ranges from 850-1000 ̊ c. catalysts and cnts characterization was carried out ...

bamboo-structured carbon nanotubes are grown on co-mo/mcm-41 catalyst in the temperature range of 873-973 k by thermal chemical vapor deposition of acetylene. this study shows that the purified carbon nanotubes have open tips and the metals of the catalyst are not encapsulated. thus, the bamboo-structure seems to grow from the base. pore size distribution of the product is quite narrow and is i...

Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes...

Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD...

The use of the Plasma Enhanced Chemical Vapor Deposition techniques have increased during the last decades. PECVD attractiveness, basically due to the lowering of the substrate temperatures, has enlarged its uses because it allows an action of ions or excited species. However, the choice of the reactors is not always easy. After presenting the main domains of applications of the PECVD technique...

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ~ H2, O2, N2, He, Ne, Ar, and Kr! and at different temperatures. The characteristic pressure, P0, of the general dependence I(P) 5 I0 exp( 2 P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the var...

The growth of vertically aligned carbon nanotubes using a direct current plasma enhanced chemical vapor deposition system is reported. The growth properties are studied as a function of the Ni catalyst layer thickness, bias voltage, deposition temperature, C2H2:NH3 ratio, and pressure. It was found that the diameter, growth rate, and areal density of the nanotubes are controlled by the initial ...

Microstructures of well-aligned multiwall carbon nanotubes grown on patterned nickel nanodots and uniform thin films by plasma-enhanced chemical vapor deposition have been studied by electron microscopy. It was found that growth of carbon nanotubes on patterned nickel nanodots and uniform thin films is different. During growth of carbon nanotubes, a nickel particle sits at the tip of each nanot...