Abstract Reliable modeling of macroscopic melt motion induced by fast transients requires the accurate and computationally efficient description emitted current density that escapes to pre-sheath. The ITER sheaths surround hot tungsten surfaces during edge-localized modes are characterized important contributions from secondary electron emission backscattering as well coupling between thermioni...

Detailed statistical rate calculations combined with electron capture theory and kinetic modeling for the electron attachment to SF(6) and detachment from SF(6)(-) [Troe et al., J. Chem. Phys. 127, 244303 (2007)] are used to test thermionic electron emission models. A new method to calculate the specific detachment rate constants k(det)(E) and the electron energy distributions f(E,epsilon) as f...

In a high-vacuum diode, the volt-ampere characteristic of thermionic emission Na+ with surface NaxAu intermetallide. Its hysteresis was found, which is associated changes in caused by action an external electric field. accordance Schottky effect, analysis current–voltage and value work function estimated. Suggested mechanism from NaxAu.

Experimental observations have long-established that there exists a smooth roll-off or knee transition between the temperature-limited (TL) and full-space-charge-limited (FSCL) emission regions of current density-temperature ( J- T) (Miram) curve, density-voltage V) curve for thermionic cathode. In this article, we demonstrate experimentally observed does not require frequently used priori assu...

Abstract Dark noise is a dominant background in photomultiplier tubes (PMTs), which are commonly used liquid-filled particle detectors for single-photon detection to see the results of interactions. A major contribution dark thermionic emission from photocathode. The Hamamatsu R7081-100 PMTs characterised temperature and purity controlled water tank, with isolated. suggest that intrinsic rate d...

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A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As an initial approach, devices were fabricated consisting of thin (<100 nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of ...

To clarify the ionization mechanism of large molecules under multi-photon ionization conditions, photo-electron spectroscopic studies on anthracene have been performed with electron imaging technique. Electron kinetic energy distributions below a few eV reveal that three kinds of ionization channels coexist, viz., vertical ionization, ionization from Rydberg states, and thermionic hot electron ...

Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in I-V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop...