نتایج جستجو برای: threshold temperature

تعداد نتایج: 568339  

Journal: :Nano letters 2005
Ritesh Agarwal Carl J Barrelet Charles M Lieber

The mechanism of lasing in single cadmium sulfide (CdS) nanowire cavities was elucidated by temperature-dependent and time-resolved photoluminescence (PL) measurements. Temperature-dependent PL studies reveal rich spectral features and show that an exciton-exciton interaction is critical to lasing up to 75 K, while an exciton-phonon process dominates at higher temperatures. These measurements t...

Journal: :Journal of the Japan Institute of Metals and Materials 1988

Journal: :Sabrao Journal of Breeding and Genetics 2022

Chili (Capsicum annuum L.) is a horticultural plant susceptible to high-temperature stress. This research studied how agronomic and physiological characteristics of chili decline due high temperature determined the threshold value decreasing 50% its yield. The experiment layout followed randomized design, consisting five stress levels (in growth chamber), namely, 31°C (daily as control), 33°C, ...

2000
B. Sas F. Portier

Nonlinear transport in the low-temperature vortex glass state of single crystal Bi2Sr2CaCu2O8 has been investigated with fast current pulses driven along the ab plane. Field cooled preparation shows a higher threshold current ~marking a jump or break in slope in the voltage response! than the zero field cooled ~ZFC! one, but it is found to be metastable and convertible to the ZFC response by a ...

2018
R. A. J. Taylor Daniel A. Herms John Cardina Richard H. Moore

The growth of plants and insects occurs only above a minimum temperature threshold. In insects, the growth rate depends on the temperature above the threshold up to a maximum. In plants the growth rate above the threshold generally depends on the availability of sunlight. Thus, the relative growth rates of crops and insect phytophages are expected to differ between temperature regimes. We shoul...

2004
S. R. Jin S. J. Sweeney C. N. Ahmad A. R. Adams B. N. Murdin

We report on the pressure dependence of the threshold current in 1.3 mm InGaAsP and 1.5 mm InGaAs quantum-well lasers measured at low temperatures ,100 K. It was found that the threshold current of both devices slowly increases with increasing pressure (i.e., increasing band gap) at ,100 K consistent with the calculated variation of the radiative current. In contrast, at room temperature we obs...

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