In this paper, it is designed and analyzed the n type tunnelling Field Effect Transistor (TFET) to obtain sub-threshold swing parameter (SS) below 60 mV/dec, it is better than the limit of conventional MOSFET. SILVACO TCAD is used for rigorous study of p-i-n structure based on Silicon. It is minimised the short channel effect of SiO2 material. It is obtained that TFET has good ability to produc...

This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects both vertical tunneling and lateral phenomena to improve device performance. Attributes ETL, its thickness (tepi) doping concentration (Nepi) are varied their impact on electrical parameters such as transf...

To meet the performance requirements of low power mobile devices, a device with high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their subthreshold slope and transconductance compared MOSFETs. However, silicon-based have on-state current, which limits use in high-performance applications. overcome this limitation, using narrower band gap material like Ge can increas...

The tunneling field-effect transistor (TFET) is one of the most promising candidates for future low-power electronics because of its potential to achieve a subthreshold swing less than the 60 mV/decade thermal limit at room temperature. It can surpass this limit because the turn-on of tunneling does not sample the Maxwell-Boltzmann distribution of carriers that gives rise to the 60 mV/decade li...

This work focuses on understanding the electronic properties of materials to enhance performance Tunnel Field Effect Transistor (TFET) through Density Functional Theory (DFT) simulations. Material selection prefers a p-type material with in-plane high density state (DOS) (and low out-of-plane effective mass, m*, where defined for many layer systems), and valence band maxima (VBM) energy stacked...

In this article, a distinctive charge plasma (CP) technique is employed to design two doping-less dual gate tunnel field effect transistors (DL-DG-TFETs) with Si0.5Ge0.5 and Si as source material. The CP methodology resolves the issues of random doping fluctuation activation. analog RF performance has been investigated for both proposed devices i.e. DL-DG-TFET Si-source in terms drive current, ...

In this work gate-on-drain L-shaped channel Tunnel FET is proposed to detect various biomolecules through label-free bio-sensing detection technique. Biomolecules can be detected in the structure modulation of ambipolar current between and drain. Modulation performed by extending gate over drain order create a overlap (cavity) etching specific portion gate. Trapped within cavity gets immobilize...