Abstract The notion of a spin field effect transistor , where action is realized by manipulating the degree freedom charge carriers instead freedom, has captivated researchers for at least three decades. These transistors are typically implemented modulating orbit interaction in transistor’s channel with gate voltage, which causes gate-controlled precession current carriers, and that modulates ...

We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features channel above submicrometer-long wedge-like nanogap, is fulfilled by transferring ultraclean boron nitride-supported MoS 2 channels directly onto dielectric-spaced vertical source/drain stacks. Electr...

Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...

Tunnel field effect transistor (TFET) technology is unique of the prominent devices in low power applications. The band-to-band tunnel switching mechanism sets TFET apart from traditional MOSFET technology. It helps to reduce leakage currents. major advantage Sub threshold slope smaller than 60mv/decade. Newer technologies are expected change gate, architectures, channel materials and transport...

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The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnelinjects carriers from a ferromagnetic emitter into the Si...