نتایج جستجو برای: unilateral transistor model

تعداد نتایج: 2155669  

Journal: :IEEE Transactions on Microwave Theory and Techniques 2017

Journal: :journal of dentistry, tehran university of medical sciences 0
allahyar geramy dental research center, dentistry research institute, tehran university of medical sciences, tehran, iran and professor, department of orthodontics, tehran university of medical sciences, tehran, iran mehdi hassanpour orthodontist, tehran, iran elham sadat-emadian-razavi post graduate student, orthodontics department, tehran university of medical sciences, tehran, iran

o bjectives: this study sought to assess distal and lateral forces and moments of asymmetric headgears by variable outer bow lengths. materials and methods : four 3d finite element method (fem) models of a cer- vical headgear attached to the maxillary first molars were designed in solidworks2010 software and transferred to ansys workbench ver. 11 software. modelscontained the first molars, thei...

2003
Jongrit Lerdworatawee Won Namgoong

A design methodology for wideband CMOS low noise amplifier (LNA) with source degeneration is presented. By allowing an arbitrary source degeneration and employing a general input matching network, the minimum noise figure of the proposed wideband CMOS LNA can be made independent of the transistor width by properly choosing the source degeneration reactance. This result shows that the proposed t...

Journal: :The Journal of The Institute of Electrical Engineers of Japan 2008

Journal: :The Journal of the Acoustical Society of America 1963

Journal: :IEEE transactions on artificial intelligence 2023

Deep Neural Networks (DNN) has transformed the automation of a wide range industries and finds increasing ubiquity in society. The high complexity DNN models its widespread adoption led to global energy consumption doubling every 3-4 months. Current measures largely monitor system or make linear assumptions models. former approach captures other unrelated anomalies, whilst latter does not accur...

Journal: :Physical chemistry chemical physics : PCCP 2015
Yong Youn Seungwu Han

In order to calculate ion currents through solid-state nanopore transistors realistically, we propose a computational model based on the Poisson-Nernst-Plank equation. In the present model, we determine the surface charge density locally on the nanopore by imposing consistency between the ion distribution and the chemical reaction at the surface. The model can consider a non-uniform influence b...

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