نتایج جستجو برای: unilateral transistor model
تعداد نتایج: 2155669 فیلتر نتایج به سال:
o bjectives: this study sought to assess distal and lateral forces and moments of asymmetric headgears by variable outer bow lengths. materials and methods : four 3d finite element method (fem) models of a cer- vical headgear attached to the maxillary first molars were designed in solidworks2010 software and transferred to ansys workbench ver. 11 software. modelscontained the first molars, thei...
A design methodology for wideband CMOS low noise amplifier (LNA) with source degeneration is presented. By allowing an arbitrary source degeneration and employing a general input matching network, the minimum noise figure of the proposed wideband CMOS LNA can be made independent of the transistor width by properly choosing the source degeneration reactance. This result shows that the proposed t...
Deep Neural Networks (DNN) has transformed the automation of a wide range industries and finds increasing ubiquity in society. The high complexity DNN models its widespread adoption led to global energy consumption doubling every 3-4 months. Current measures largely monitor system or make linear assumptions models. former approach captures other unrelated anomalies, whilst latter does not accur...
In order to calculate ion currents through solid-state nanopore transistors realistically, we propose a computational model based on the Poisson-Nernst-Plank equation. In the present model, we determine the surface charge density locally on the nanopore by imposing consistency between the ion distribution and the chemical reaction at the surface. The model can consider a non-uniform influence b...
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