The vortex glass transition in the presence of columnar defects is studied by Monte Carlo simulations of a vortex loop model, suggested by the analogy to the T = 0 superconductor-insulator transition for dirty bosons in (2+1)D. From finite-size scaling analysis of the I-V characteristic we find two dynamical exponents describing the non-equilibrium behavior. We obtain z⊥ = 6±0.5 and z‖ = 4 ± 0....

Transmission Line Pulse is a short pulse (25ns to 150ns) measurement of the current-voltage (I/V) characteristics of the ESD protection built into an integrated circuit. The short TLP pulses are used to simulate the short ESD pulse threats and integrated circuit must tolerate without being damaged. In this work the fundamental principles of how the TLP pulse is generated and used to create I-V ...

The purpose of the present cross-sectional, convenience sampled study was to ascertain differences in diet and lifestyle between cat (n 155) and dog (n 318) owners and their pets. Average cat ownership was 6.1 (SD 5) years and average cat's age was 6.9 (SD 5) years. Cats were reported to be overweight (14 %), fed ad libitum (87 %), given medication (11 %) and had health conditions (24 %). Cat's...

In 1975, Julliere proposed a simple model for tunneling between two ferromagnetic metals, assuming that the spin is conserved in the tunneling process and that the tunneling current is proportional to the density of states of each spin at the ferromagnetic electrodes. A magnetoresistance ~MR! effect then appears when one compares the resistance for cases in which the magnetization of the electr...

Electron cyclotron resonance (ECR) discharges of HBr/Ar, HBr/H2, or HBr/CH4 were used for dry etching of Ga-based (GaAs, GaSb, and A1GaAs) and In-based (InP, InAs, InSb, InGaAs, and InA1As) III-V semiconductors. The effects of variations in pressure (1-20 mTorr), gas composition, and additional RF-induced bias on the sample were examined. At least -100 V of dc bias is required to initiate etchi...

We show that elastic currents that take into account variations of the tunnel transmitivity with voltage and a large ratio of majority to minority spin densities of states of the s band, can account for the low voltage current anomalies observed in magnet-oxide-magnet junctions. The anomalies can be positive, negative or have a mixed form, depending of the position of the Fermi level in the s b...

A theoretical model for quantum well varactors is presented. The model is used to calculate the device C-V and I-V characteristics and very good agreement has been found between the calculated and measured results. Based on the model, a triple barrier double well varactor has been designed and fabricated. A very high capacitance ratio within a very small bias range is achieved, as designed. Det...

A theoretical model for the I-V characteristics of buried-gate GaAs metal semiconductor field-effect transistors has been developed by solving dc continuity equation. This analysis includes the ion implanted buried-gate process. It is shown that the currentvoltage could be rather increased when introducing an optical fiber to the buried-gate GaAs MESFETs structure. The current -voltage characte...