نتایج جستجو برای: v shaped cantilever

تعداد نتایج: 376036  

Journal: :Optics express 2011
S M C Abdulla L J Kauppinen M Dijkstra M J de Boer E Berenschot H V Jansen R M de Ridder G J M Krijnen

The principle, fabrication and characterization of a dielectric MEMS cantilever located a few 100 nm above a racetrack ring resonator are presented. After fabrication of the resonators on silicon-on-insulator (SOI) wafers in a foundry process, the cantilevers were integrated by surface micromachining techniques. Off-state deflections of the cantilevers have been optimized to appropriately posit...

2002
R R A Syms

Silicon microactuators capable of very long travel are described. The design is based on a laterally resonant cantilever, driven by an electrothermal shape bimorph located at the root. Performance characteristics are given for deep structures fabricated in bonded silicon-on-insulator material. Peak-to-peak displacements of more than 500 μm are obtained with cantilevers of 14 mm length, 30 μm wi...

This paper presents an experimental research on the distribution of local friction factor, fb, and global friction factor, f, over the cross-section of a channel with V-shaped bottom, which typically occurs in sewers and culverts. Several series of experiments were conducted for measuring velocity and boundary shear stress. It is found that, Darcy-Weisbach, f, is more sensitive than other resis...

In this paper, three-dimensional two phase turbulent free surface flow is solved by an in-house code. The incompressible Reynolds average Navier-Stocks equations (RANS) with k-ε turbulence model are solved by the finite volume method in the non-orthogonal curvilinear coordinates. For the modeling of the free surface effect, Lagrangian propagation volume tracking method (VOF-PLIC) is used. The c...

1998
D. Lange A. Koll H. Baltes

We present a chemical gas sensor based on a resonating cantilever beam in CMOS MEMS technology. The sensor is actuated employing electrothermal actuation. Thus, for a 300 μ m long beam vibration amplitudes of 6.5 nm per mW heating power are achieved. The vibrations are detected with piezoresistors in a Wheatstone bridge scheme. Detection sensitivities above 200 μ V per mW heating power are meas...

The resonant frequency and sensitivity of an atomic force microscope (AFM) cantilever with assembled cantilever probe (ACP) have been analyzed and a closed-form expression for the sensitivity of vibration modes has been obtained. The proposed ACP comprises an inclined cantilever and extension, and a tip located at the free end of the extension, which makes the AFM capable of topography at sidew...

2004
Akio Higo Satoshi Iwamoto Satomi Ishida Hiroyuki Fujita Yasuhiko Arakawa Hiroshi Toshiyoshi Hirohito Yamada Akiko Gomyo Masatoshi Tokushima

We report design and fabrication process of MEMS (Micro Electro Mechanical Systems) actuators for a new type of optical switch integrated with photonic crystal (PhC) waveguides. Thin film poly-silicon electrostatic microactuator (either a cantilever or a bridge style) is placed over a PhC waveguide to induce optical modulation by means of mechanical motion in the evanescent fields. For low volt...

Journal: :Micromachines 2023

In response to the growing demand for high-sensitivity accelerometers in vector hydrophones, a piezoelectric MEMS accelerometer (PMA) was proposed, which has four-cantilever beam integrated inertial mass unit structure, with advantages of being lightweight and highly sensitive. A theoretical energy harvesting model established cantilever beam, geometric dimensions structure microdevice were opt...

2015
Amit A. Deshmukh Ami A. Desai

A V-shaped ultra-wideband antenna has been analyzed. Firstly, a rectangular planar monopole antenna has been studied and its base is tapered to obtain a better bandwidth. The feed-line is then offset for impedance matching. A bandwidth of around 14.3 GHz is obtained for this configuration. Then, a V-slot is cut in the patch and a parametric study of the width of the V-slot, the width of the pat...

2005
Timothy B. Boykin Gerhard Klimeck Fabiano Oyafuso

The valley splitting senergy difference between the states of the lowest doubletd in strained silicon quantum wells with a V-shaped potential is calculated variationally using a two-band tight-binding model. The approximation is valid for a moderately long sapproximately 5.5–13.5 nmd quantum well with a V-shaped potential which can be produced by a realistic delta-doping on the order of nd<10 c...

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