Thin films of tin sulfide (SnS) were prepared by thermal evaporation technique on glass substrates and on n-type Si substrate and their physical properties were studied. The phase of the obtained thin films before and after thermal treatment was confirmed by X-ray diffraction analysis and Raman spectra. Optical transmission and reflection spectra were measured in the wavelength range 300-1800 n...

The discovery of uniform deposition of high-quality single layered graphene on copper has generated significant interest. That interest has been translated into rapid progress in terms of large area deposition of thin films via transfer onto plastic and glass substrates. The opto-electronic properties of the graphene thin films reveal that they are of very high quality with transmittance and co...

The use of bionanostructures in real-world applications will require precise control over biomolecular self-assembly and the ability to scale up production of these materials. A significant challenge is to control the formation of large, homogeneous arrays of bionanostructures on macroscopic surfaces. Previously, bionanostructure formation has been based on the spontaneous growth of heterogenic...

In this paper, we present the characteristics of high-performance strain-compensated MOCVD-grown 1200-nm InGaAs and 1300-nm InGaAsN quantum-well (QW) lasers using AsH3 and U-Dimethylhydrazine as the group V precursors. The design of the InGaAsN QW active region utilizes an In-content of approximately 40%, which requires only approximately 0.5% N-content to realize emission wavelengths up to 131...

An x-ray-diffraction method that directly senses the phase of the structure factor is demonstrated and used for determining the local polarity of thin ferroelectric films. This method is based on the excitation of an x-ray standing-wave field inside the film as a result of the interference between the strong incident x-ray wave and the weak kinematically Bragg-diffracted x-ray wave from the fil...

GaN layers with wurtzite structure were found to exhibit intense photoluminescence (PL) at 3.47eV (T = 10K) corresponding to recombination of excitons bound to neutral donors. The dependence of this luminescence on the growth conditions, layer thickness and density of excitation power was studied. New PL bands were evidenced in the UV region under high levels of excitation (Iexc 3 0.56mJ/cm ).

Chemical vapour deposition (CVD) of the superconducting 2:2:1:2 phase in the Bi-Sr-Ca-Cu-0 system from different metalorganic precursors is thermodynamically investigated. Both precursors without fluorine and fluorine-containing precursors were employed. The oxygen source was O, H,O, O,+H,O or N,O. The effect of different deposition parameters on the extension of the region where the 2:2:1:2 ph...