We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAsand the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of ...

We show that a buried oxide layer forming a current aperture in an all epitaxial vertical-cavity surface emitting laser has a profound influence on the optical and electrical characteristics of the device. The lateral index variation formed around the oxide current aperture leads to a shift in the cavity resonance wavelength. The resonance wavelength under the oxide layer can thus be manipulate...

A vertical-external-cavity surface-emitting-laser is demonstrated in the terahertz range, which is based upon an amplifying metasurface reflector composed of a sub-wavelength array of antennacoupled quantum-cascade sub-cavities. Lasing is possible when the metasurface reflector is placed into a low-loss external cavity such that the external cavity—not the sub-cavities—determines the beam prope...

High Speed Vertical Cavity Surface Emitting Lasers with Injection Locking

We apply the modal coherence theory to evaluate the spatial mode structure of a 2×2 phase-coupled array of vertical cavity surface emitting lasers (VCSELs). The eigenmode structure is extracted for different pump currents by measuring the degree of spatial coherence of all VCSEL pairs in the array. The results reveal the impact of optical disorder and spatial hole burning on the modal discrimin...

We experimentally and numerically observe synchronization of chaos in two mutually coupled vertical-cavity surface-emitting lasers (VCSELs) with time delay. We observe in-phase and antiphase synchronization of polarization-resolved chaotic temporal wave forms under the condition of wavelength matching. We investigate leader-laggard relationship between two chaotic wave forms of mutually coupled...

In order to exploit the potential of phototransistors for vertical-cavity surface-emitting laser (VCSEL) applications, optical and electrical investigations on GaAs-based devices were conducted. The characterization of phototransistors consists of measurements and improvements of the current gain and studies on the spectral behavior. In addition, the influences of various doping concentrations ...

1.55-microm vertical cavity surface-emitting low-parasitic lasers show open eyes up to 22-Gb/s modulation speed. Uncooled error-free operation over a wide temperature range up to 85 degrees C under constant bias conditions is demonstrated at 12.5-Gb/s data rate. At these fixed bias conditions the laser characteristics are practically invariant with temperature. These are the highest data-rates ...