نتایج جستجو برای: vertical channel decomposition
تعداد نتایج: 411141 فیلتر نتایج به سال:
Organic electrochemical transistors (OECTs) belong to the class of electrolyte gated organic (EGOTs) that offer a smooth interface with biology in combination high transconductance values typically few mS. Fabrication-wise, though, most up-to-date reported devices are limited two dimensional structures, where transistor channel is patterned on same plane as source and drain electrodes. Here, me...
Forced convective condensation in vertical channel is investigated numerically. The condensation boundary layers that occur due to temperature difference between the walls and saturation temperature of steam is simulated by the volume of fluid (VOF) method. The effect of variations in the hydraulic diameter, steam velocity, Re number and temperature difference between the wall and saturation te...
[1] Levees are the primary elements of self-formed submarine channels, yet little is know about their morphodynamics. We present field observations of static levee morphology and stratigraphy in addition to laboratory experiments that link levee morphodynamics to turbidity current flow properties. These observations are used to motivate a levee growth model. Using a three-dimensional seismic vo...
This paper presents a channel preemption model for vertical handoff in heterogeneous WLAN (wireless LAN) embedded cellular networks. The novelty of this paper is right in that a newly initiated mobile node (MN) outside the WLAN coverage can preempt the channels occupied by an MN inside the WLAN coverage when the cellular channels are completely used up. The channel preempted MN is forced to swi...
We propose and demonstrate a two dimensional/three dimensional hybrid channel AlGaN/GaN high electron mobility transistor (HEMT) structure with a flat transconductance profile using polarization-induced channel engineering. A quasi three dimensional electron gas profile with 5–6 nm of vertical channel depth was formed by grading the channel region linearly from GaN to Al0.15Ga0.85 N over 50 Å. ...
Graphene has attracted considerable interest for future electronics, but the absence of a bandgap limits its direct applicability in transistors and logic devices. Recently, other layered materials such as molybdenum disulphide (MoS(2)) have been investigated to address this challenge. Here, we report the vertical integration of multi-heterostructures of layered materials for the fabrication of...
It is well known that lower channel profits are achieved in the bilateral (manufacturer-re seller) monopoly if manufacturer and reseller independently optimize their respective profits: They take each other's decisions as given i.e., adopt decision rules that ignore their influence on the other channel member. Higher profits are achieved if they coordinate their profit maximiz ing decisions. ...
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