Title of Dissertation: HARMONIC AND RANDOM VIBRATION DURABILITY INVESTIGATION FOR SAC305 (Sn3.0Ag0.5Cu) SOLDER INTERCONNECTS Yuxun Zhou, Doctor of Philosophy, 2008 Dissertation directed by: Professor Abhijit Dasgupta Department of Mechanical Engineering Vibration loading is commonly encountered during the service life of electronic products. However, compared to thermal cycling durability, vibr...

The electromagnetic band gap structures are widely used to suppress pronounced surface waves in antennas with thicker substrate and higher dielectric constant. This paper reviews various application of Electromagnetic band gap structure in microstrip antenna, a band gap characterization of an electromagnetic bandgap structure along with the explanation of various reported configurations of comp...

The electromagnetic band gap structures are widely used to suppress pronounced surface waves in antennas with thicker substrate and higher dielectric constant. This paper reviews various application of Electromagnetic band gap structure in microstrip antenna, a band gap characterization of an electromagnetic bandgap structure along with the explanation of various reported configurations of comp...

The band gap of semiconductors like silicon and silicon carbide (SiC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p x-ray absorption spectroscopy (XAS), x-ray emission spectroscopy (XES) and resonant inelastic x-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CB...

In the present paper, the band gap characteristics of oxygen functionalized-monolayer scandium carbide (monolayer Sc2CO2) under a perpendicular external electric field (E-field) were studied using DFT calculations for the potential application of MXene in optoelectronic and optical nanodevices. In contrast to general pristine single-layer materials under an external E-field, monolayer Sc2CO2 un...

Using a band-structure method that includes the correction to the band gap error in the local density approximation (LDA), we study the chemical trends of the band gap variation in III-V semiconductors and predict that the band gap for InN is 0.8 ± 0.1 eV, which is much smaller than previous experimental value of ∼ 1.9 eV. The unusually small band gap for InN is explained in terms of the high e...

An electrically controlled nonreciprocal electromagnetic band-gap material is proposed and studied. The new material is a periodic three-dimensional regular lattice of small magnetized ferrite spheres. In this paper, we consider plane electromagnetic waves in this medium and design an analytical model for the material parameters. An analytical solution for plane-wave reflection from a planar in...

We report the design and experimental demonstration of a gyrotron oscillator using a photonic-band-gap (PBG) structure to eliminate mode competition in a highly overmoded resonator. The PBG cavity supports a TE(041)-like mode at 140 GHz and is designed to have no competing modes over a minimum frequency range delta omega/omega of 30% about the design mode. Experimental operation of a PBG gyrotr...

Band gap modification for small-diameter (approximately 1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter wires exhibit a direct band gap that increases as the wire diameter narrows, irrespective of surface termination. This effect has been observed...