نتایج جستجو برای: w band amplifier
تعداد نتایج: 346600 فیلتر نتایج به سال:
We present measurements of the power noise due to optical amplification in a Nd:YAG free-space traveling-wave amplifier as the amplifier transitions from the linear regime into the heavily saturated regime. The quantum noise behavior is demonstrated by saturating the gain of a 100-W class zigzag slab amplifier with a high-power beam and measuring the power noise detected by a single-spatial-mod...
In this paper the design and a complete characterization of an InP/InGaAs single heterojunction bipolar (SHBT) mm-wave amplifier is described. The circuit is designed for the 60 GHz band allocated for wireless LAN and mobile communications. The amplifier achieves a gain of 20 dB from 50 GHz to 70 GHz. Beside S-parameter noise and gain compression measurements are presented. No comparable HBT am...
We present measurements of the power noise that is due to optical amplification in a laser-diode-pumped Nd:YAG free-space traveling-wave linear amplifier in a master-oscillator-power-amplifier configuration. The quantum noise behavior of the optical amplifier was demonstrated by use of InGaAs photodetectors in a balanced detection configuration, at a total photocurrent of 100 mA and in a freque...
Broad-band microwave packaging of a travelingwave amplifier with an on-chip bandwidth of 2–50 GHz is described. Techniques to reduce overall insertion losses and to extend the low-frequency cutoff of the amplifier while maintaining gain-flatness are discussed. The packaged amplifier modules exhibit excellent performance from 100 kHz to 50 GHz. They are demonstrated as modulator drivers and rece...
We report here an all-fiber structure tunable gas Raman laser based on deuterium-filled hollow-core photonic crystal fibers (HC-PCFs). An cavity is fabricated by fusion splicing a 49 m high-pressure HC-PCF with two solid-core single-mode at both ends. When pumped pulsed fiber amplifier seeded diode 1.5 ?m, lasers ranging from 1643 nm to 1656 are generated. The maximum output power ~1.2 W conver...
In this paper, a high-efficiency GaN Doherty power amplifier (DPA) for 5G applications in the N78 sub-6 GHz band is introduced. The theoretical analysis of matching networks peak and carrier transistors presented, with focus on impact unequal splitting both recommendation post-harmonic suppression network. proposed design features an Wilkinson divider at input network output, which are crucial ...
A transimpedance amplifier (TIA) is designed based on the first order wave equation. The feedback resistance is set as the ohJective function for transimpedance. The main feedback amplifier provides transimpedance and a wide band compensation amplifier determines the characteristics of overall TIA. The stability of lhe T lA is not affected due to the open loop nature of compensation. Simulation...
In this study, an eight-channel wide-band intermediate frequency (IF) receiver with S-band input frequency, output of 200 MHz, and a signal bandwidth 160 MHz was developed. The performance measurement results the IF showed that fundamental second harmonic were involved in output. This caused by nonlinearity characteristics final stage amplifier. Therefore, amplifier changed to differential ampl...
in this paper, the results of design and implementation of the subsystems for generating loran pulse are proposed based on method of carrier’s pulse width change. in order to generate the desired pulse, firstly a pwm signal generated and then it is applied to a class-d switching amplifier. the results show that by generating appropriate pulses in digital fpga subsystem for application in switch...
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