نتایج جستجو برای: wurtzite

تعداد نتایج: 1679  

2006
P. Specht J. C. Ho X. Xu R. Armitage E. R. Weber E. Erni C. Kisielowski

Zincblende and wurtzite phases of InN are found in InN epilayers deposited by molecular beam epitaxy on GaN buffers which were grown by metal organic chemical vapor deposition. Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in both phases of InN. GaN buffer layers were used as VEELS reference. The chemistry and crystalline structure of the observed a...

Journal: :Superlattices and Microstructures 2018

Journal: :Applied Physics Letters 2006

Journal: :Science and Technology of Advanced Materials 2015

Nanocrystals of ZnO were prepared by microwave irradiation using Zn (II) acetate and triethanol amin (TEA) as the starting materials and water as solvent. The nanocrystals of ZnO with hexagonal (Wurtzite) structure were characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), UV-Vis absorption and FTIR Spectroscopy techniques.

Journal: :Physical Review Materials 2023

Wurtzite Boron Nitride ($w$BN) is a wide band gap BN polymorph with peculiar mechanical properties (hardness and stiffness). After its first synthesis in 1963 as transformation of hexagonal ($h$BN) under high temperature pressure conditions, lot progress have been made order to stabilize wurtzite phase at atmospheric pressure. Today the crystallization good quality samples finally possible. Thi...

2005
W. Z. Shen J. Chen H. Ogawa S. Das Sarma

The optical transmission, photoluminescence, and reflection spectra have been measured on a high-quality wurtzite indium nitride (InN) single crystal in the range of 0.5–20.0 eV. The fundamental bandgap of intrinsic InN has been extracted by taking into account the Burstein–Moss shift, bandgap renormalization and Urbach band tail effects, and found to be very close to the recent strongly re-est...

2013
S. Assali I. Zardo S. Plissard D. Kriegner M. A. Verheijen G. Bauer A. Meijerink A. Belabbes F. Bechstedt J. E. M. Haverkort E. P. A. M. Bakkers

The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexago...

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