In this paper, a new simulation method for two-tone characteristics calculations and the third-order intercept point (OIP3) of heterojunction bipolar transistor (HBT) in large-scale time domain is proposed. Base on waveform relaxation (WR) and monotone iterative (MI) methods, we solve a set of nonlinear ordinary differential equation (ODE) of equivalent circuit. With this approach, the two-tone...

A wideband H-band detector operating near 300 GHz has been developed based on SiGe HBT technology. The detector consists of an on-chip antenna and a HBT differential pair for square-law detection. It showed responsivity of more than 1,700 V/W and noise equivalent power (NEP) smaller than 180 pW/Hz0.5 for the measured frequency range of 250–350 GHz. The maximum responsivity and the minimum NEP w...

Noise characterization of bipolar transistors is typically a lengthy and costly process. As a result, routine monitoring of microwave noise does not generally occur for HBT technologies or products. In contrast, vast quantities of parametric DC data and S-parameter data are measured during the regular course of technology development and production. In work by Voinigescu et al [1], DC and S-par...

Hanbury-Brown Twiss (HBT) correlation measurements provide valuable information about the phase space distribution of matter in ultrarelativistic heavy-ion collisions. The rapidity dependence of HBT radii arises from a nontrivial interplay between longitudinal and transverse expansion and the time dependence of the freeze-out pattern. For a non-accelerating longitudinal expansion the dependence...

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