نتایج جستجو برای: 13 cyclooctadiene

تعداد نتایج: 332763  

2010
Hyeong Choi Byung Hee Han Yong Suk Shim Sung Kwon Kang Chang Keun Sung

In the title compound, C(16)H(18)N(2)O(4)S, the dihedral angle between the hy-droxy-phenyl ring and the plane of the thio-urea moiety is 54.53 (8)°. The H atoms of the NH groups of thio-urea are positioned anti to each other. In the crystal, inter-molecular N-H⋯S, N-H⋯O, and O-H⋯S hydrogen bonds link the mol-ecules into a three-dimensional network.

Journal: :Journal of the American Chemical Society 2021

Transition metal π-allyl complexes are key reagents/intermediates of various catalytic and stoichiometric allylation reactions. We now report the first transition complex a heavier allylic π-system. The η3-Si2Ge allyl nickel is formally obtained by oxidative addition Si–Cl bond vinylidene [R2(Cl)Si–(R)Si═(NHC)Ge:] to [Ni(COD)2] (R = 2,4,6-triisopropylphenyl; NHC 1,3-diisopropyl-4,5-dimethylimid...

Journal: :Catalysts 2023

A series of composites containing nanoparticles NiO (from 1 to 10% by weight per Ni), deposited on NORIT charcoal, was prepared the decomposition Ni0 complex Ni(cod)2 (cod = cis,cis-1,5-cyclooctadiene). Ni content in set loading appropriate quantities precursor. The catalytic activity associated with situ generation active sites due a reduction NiO, hence could be stored air without loss their ...

Journal: :Journal of immunology 2006
Allison-Lynn Andrews John W Holloway Stephen T Holgate Donna E Davies

IL-4 is a key cytokine associated with allergy and asthma. Induction of cell signaling by IL-4 involves interaction with its cognate receptors, a complex of IL-4Ralpha with either the common gamma-chain or the IL-13R chain alpha1 (IL-13Ralpha1). We found that IL-4 bound to the extracellular domain of IL-4Ralpha (soluble human (sh)IL-4Ralpha) with high affinity and specificity. In contrast with ...

Journal: :Communications materials 2021

Abstract Cu 2 O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-temperature fabrication of films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report thin 20–80 nm thickness hole mobility up to 92 cm V −1 s using atmospheric-pressure spatial atomic layer deposition at ...

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