AlN thin films have been grown on R((1-12) surface-cut)-Al2O3, SiO2-glass and C((001) surface-cut)-Al2O3 substrates, by using a reactive-RF-sputter-deposition method. X-ray diffraction (XRD) shows that AlN film has (110) orientation of wurtzite crystal structure for R-Al2O3 and (001) orientation for SiO2-glass and C-Al2O3 substrates. The film thickness was analyzed by Rutherford backscattering ...

Palladium catalysts containing Pd(II) supported on Al2O3 and alumina-based mixed oxides, Al2O3-ZrO2, Al2O3-CeO2, and Al2O3-Fe2O3, are very effective in the Heck coupling of iodobenzene with cyclohexene in DMF solution. The best results, up to 81% of monoarylated products with a selectivity to 4-phenylcyclohexene (3) close to 90% were obtained with KOH as a base. The catalytic activity of pallad...

We have developed a two-step growth scheme for single-crystal Al2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminum (Al) oxide layer at room temperature and crystallizing it at a high tem...

Articles you may be interested in Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors Appl. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-...

Investigation of the properties of Al2O3-on-GaN metal-oxide-semiconductor diodes is reported. A new method is shown to calculate the metal-oxide barrier height based on the onset of the FowlerNordheim tunnelling current regime in direct bias. The Ni/Al2O3 barrier was extracted, for the first time with this method, and it was found to match other reports in the literature. The dependence of the ...

In this study, functionally graded Ni-Al2O3 composite coating (FGN-A) has been produced from nickel Watt’s bath containing different concentrations of Al2O3 particles. For this, different composite coatings were electroplated in the same bath with different particles concentration to find the optimum concentration of particles in which the maximum content with uniform distribution of Al2O3 part...

X-ray photoelectron spectroscopy was applied to study the hydroxylation of a-Al2O3 (0001) surfaces and the stability of surface OH groups. The evolution of interfacial chemistry of the a-Al2O3 (0001) surfaces and metal/a-Al2O3 (0001) interfaces are well illustrated via modifications of the surface O1s spectra. Clean hydroxylated surfaces are obtained through waterand oxygen plasma treatment at ...

Increasing the thermal conductivity of PDMS (polydimethylsiloxane) based microfluidics is an important issue for the thermal management of hot spots produced by embedding electronic circuits in such systems. This paper presents a solution for enhancing the thermal conductivity of such PDMS based microfluidics by introducing thermally conductive alumina (Al2O3) nanoparticles, forming PDMS/Al2O3 ...

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulatorsemiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated...

Excellent mechanical properties and fatigue performance of Al/Al2O3 metal-based nanocomposites caused to introduce this material as a good candidate for various applications. In this regard, the preparation and characterization of this composite can be considered as a hot issue for research. The study was carried out in several steps including: (i) preparation of Al/Al2O3 metal-based nanocompos...