نتایج جستجو برای: a resistive layer 400 ohm

تعداد نتایج: 13495821  

2010
Dibin Zhu Ahmed Almusallam Stephen P. Beeby John Tudor

This paper reports a bimorph piezoelectric vibration energy harvester incorporating multiple PZT layers. The advantage of a multi-layer generator is that it produces a higher power than a single-layer generator having the same total thickness. In addition, a lower voltage is required to polarize a multi-layer generator reducing the risk of breakdown during polarization. Moreover, the optimum re...

2012
HAN YANG XIN JIANG MAHESH SAMANT BRIAN HUGHES LI GAO ANDREW KELLOCK STUART PARKIN Cheng-Han Yang

Submitted for the MAR10 Meeting of The American Physical Society Novel Resistive Switching in MgO with Nitrogen Doping CHENGHAN YANG, Stanford University, XIN JIANG, MAHESH SAMANT, BRIAN HUGHES, LI GAO, ANDREW KELLOCK, STUART PARKIN, IBM Almaden Research Center — Resistive switching in oxide thin films has been extensively explored as a candidate for the next generation nonvolatile memory. The ...

2012
Paulo R. F. Rocha Asal Kiazadeh Qian Chen Henrique L. Gomes

Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording currentvoltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explai...

Journal: :TEION KOGAKU (Journal of Cryogenics and Superconductivity Society of Japan) 2000

Journal: :Nanoscale 2023

The analog resistive switching properties of amorphous InGaZnO x ( a -IGZO)-based devices with Al as the top and bottom electrodes an Al-O interface layer inserted on electrode are presented...

2016
Firman Mangasa Simanjuntak Debashis Panda Kung-Hwa Wei Tseung-Yuen Tseng

In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching c...

2011
Ruth Pearce Tihomir Iakimov Mike Andersson Lars Hultman Anita Lloyd Spetz Rositsa Yakimova

Epitaxially grown single layer and multi layer graphene on SiC devices were fabricated and compared for response towards NO2. Due to electron donation from SiC, single layer graphene is n-type with a very low carrier concentration. The choice of substrate is demonstrated to enable tailoring of the electronic properties of graphene, with a SiC substrate realising simple resistive devices tuned f...

The absorption properties of charge transfer organic semiconductor TTF-TCNQ (tetrathiafulvalene-tetracyanoquhodimete ) filmsdeposited on KBr singlecrystal, quartz and glass substrates in far infrared have been investigated. An absorption edge at ?10 ??m was observed. Photoconductivity, photoconduction efficiency and gain and photocarrier's lifetime have been measured. The results show an el...

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