نتایج جستجو برای: aluminum nitride nanocluster

تعداد نتایج: 65099  

2012
Shivdev Singh Nirmal S Kalsi

This research work presents the results of an experimental investigation of cryogenically treated, coated and uncoated tungsten carbide cutting tool inserts in turning of AISI 1040 steel. Three different tungsten carbide inserts coated with aluminum chromium nitride (AlCrN), titanium nitride (TiN) and uncoated WC were taken and treated cryogenically. Experiments were performed to evaluate the c...

2011
Canan Atilgan Ibrahim Inanc Ali Rana Atilgan

Using molecular dynamics simulations, we have investigated the effect of embedding nanoclusters of radius 3-7 Å on the dynamical and mechanical properties of 1,4-cispolybutadiene melts. To see the effect of polymer-nanocluster interaction strength on the bulk modulus, the van der Waals interactions (vdW) between the polymer chain and nanocluster have been varied from weak to very stong while ke...

Journal: :Journal of the Ceramic Society of Japan 1992

2016
Jonathan D. B. Bradley Zhan Su E. Salih Magden Nanxi Li Matthew Byrd Thomas N. Adam Gerald Leake Douglas Coolbaugh Michael R. Watts

A key challenge for silicon photonic systems is the development of compact on-chip light sources. Thulium-doped fiber and waveguide lasers have recently generated interest for their highly efficient emission around 1.8 μm, a wavelength range also of growing interest to silicon-chip based systems. Here, we report on highly compact and low-threshold thulium-doped microcavity lasers integrated wit...

2005
Nikolaus Dietz Mustafa Alevli Hun Kang Martin Straßburg Vincent Woods Ian T. Ferguson Craig E. Moore Beatriz H. Cardelino

The growth of high-quality InN and indium rich group III-nitride alloys are of crucial importance for the development of high-efficient energy conversion systems, THz emitters and detectors structures, as well as for high-speed linear/nonlinear optoelectronic elements. However, the fabrication of such device structures requires the development of growth systems with overlapping processing windo...

2009
Babar BASHIR Joel JACQUET

Gallium Nitride (GaN) and its alloys with aluminum (AlxGa1-xN) and indium (InyGa1-yN & AlzIn1-zN) have gained lots of attention in optoelectronics research community in the last decade. These semiconductors relativity have a wide bandgap and easy to make n-type layers by Si doping and p-type layers by Mg doping. Consequently nitride alloys have proved to be very attractive candidate for the fab...

2006
A. Pandolfi S. Conti M. Ortiz

We develop a model of distributed damage in brittle materials deforming in triaxial compression based on the explicit construction of special microstructures obtained by recursive faulting. The model aims to predict the effective or macroscopic behavior of the material from its elastic and fracture properties; and to predict the microstructures underlying the microscopic behavior. The model acc...

2012
Bhargav P Nabar Zeynep Çelik-Butler Brian H Dennis Richard E Billo

Nanoimprint lithography is emerging as a viable contender for fabrication of large-scale arrays of 5–500 nm features. A fabrication process for the realization of thin nanoporous membranes using thermal nanoimprint lithography is presented. Suspended silicon nitride membranes were fabricated by low-pressure chemical vapor deposition (LPCVD) in conjunction with a potassium hydroxide-based bulk m...

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