Negative differential conductance in metal/amorphous nitrogenated carbon a-CNx /Si structures is demonstrated at room temperature. These metal-insulator-semiconductor tunnel diodes are fabricated by optimizing the tunnel barrier at the a-CNx /Si junction through the control of the band gap and nitrogen doping level in carbon where this a-C layer acts as a semi-insulator. A small electron tunnel...

At room temperature, 300 K, silicon carbide film was formed using monomethylsilane gas on the reactive surface prepared using argon plasma. Entire process was performed at reduced pressure of 10 Pa in the argon plasma etcher, without a substrate transfer operation. By this process, the several-nanometer-thick amorphous thin film containing silicon-carbon bonds was obtained on various substrates...

In order to reach high level of transistor performances, it is desirable to increase electrical conductivity of the device. An efficient way to enhance carrier mobility in conduction channel is to generate strain in the structure induced by process. To achieve that, stress engineering of the contact etch stop layer (CESL), an amorphous hydrogenated silicon nitride film deposited by plasma enhan...

We propose and explore theoretically a new concept of ultrafast optical switches based on nonlinear plasmonic nanoantennas. The antenna nanoswitch operates on the transition from the capacitive to conductive coupling regimes between two closely spaced metal nanorods. By filling the antenna gap with amorphous silicon, progressive antenna-gap loading is achieved due to variations in the free-carr...

Germanium optical fibers have been fabricated using a high pressure chemical deposition technique to deposit the semiconductor material inside a silica capillary. The amorphous germanium core material has a small percentage of hydrogen that saturates the dangling bonds to reduce absorption loss. Optical transmission measurements were performed to determine the linear losses over a broad mid-inf...

Germanium is an extremely important material used for numerous functional applications in many fields of nanotechnology. In this paper, we study the crystallization of amorphous Ge using atomistic simulations of critical nano-metric nuclei at high temperatures. We find that crystallization occurs by the recurrent transfer of atoms via a diffusive process from the amorphous phase into suitably-o...

We review three different approaches for the calculation of electromagnetic multipoles, namely Cartesian primitive irreducible multipoles and spherical multipoles. identify latter as best suited to describe scattering radiation, exemplified an amorphous silicon sphere. These are then used calculate optical force acting on semiconductor, dielectric or metallic particles in a wide wavelength rang...

The variety of semiconductor materials has been extended in various directions, for example, to very wide bandgap materials such as oxide semiconductors as well as to amorphous semiconductors. Crystalline β-Ga2O3 is known as a transparent conducting oxide with an ultra-wide bandgap of ~ 4.9 eV, but amorphous (a-) Ga2Ox is just an electrical insulator because the combination of an ultra-wide ban...

We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and...

The results on measuring the I--V characteristics of metal-semiconductor transition within Ti (200 nm)|Si@O@Al (180 nm)|Ti (203 nm) test structure are presented. basis Si@O@Al nanocomposite is a solid solution Al in amorphous silicon a-Si(Al). has form characteristic reverse-biased ohmic contact between metal and p-type semiconductor, which implies that a-Si(Al) substitutional solution. It show...